All MOSFET. TSF8N65M Datasheet

 

TSF8N65M Datasheet and Replacement


   Type Designator: TSF8N65M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220F
 

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TSF8N65M Datasheet (PDF)

 ..1. Size:1169K  truesemi
 tsp8n65m tsf8n65m.pdf pdf_icon

TSF8N65M

TSP8N65M/TSF8N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.5A,650V,Max.RDS(on)=1.50 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an

 8.1. Size:1268K  truesemi
 tsp8n60m tsf8n60m.pdf pdf_icon

TSF8N65M

TSP8N60M/TSF8N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.5A,600V,Max.RDS(on)=1.20 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an

Datasheet: TSP7N60M , TSF7N60M , TSP7N65M , TSF7N65M , TSP7N80M , TSF7N80M , TSP840MR , TSP8N65M , STP75NF75 , YJB150G06AK , YJB150N06BQ , YJB200G06B , YJD15N10A , YJD18GP10A , YJD20N06A , YJD30N02A , YJD40N04A .

History: SIRA14DP

Keywords - TSF8N65M MOSFET datasheet

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