TSF8N65M Specs and Replacement

Type Designator: TSF8N65M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220F

TSF8N65M substitution

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TSF8N65M datasheet

 ..1. Size:1169K  truesemi
 tsp8n65m tsf8n65m.pdf pdf_icon

TSF8N65M

TSP8N65M/TSF8N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.5A,650V,Max.RDS(on)=1.50 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 29nC) minimize on-state resistance, provide superior switching High ruggedness performance, an... See More ⇒

 8.1. Size:1268K  truesemi
 tsp8n60m tsf8n60m.pdf pdf_icon

TSF8N65M

TSP8N60M/TSF8N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.5A,600V,Max.RDS(on)=1.20 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 29nC) minimize on-state resistance, provide superior switching High ruggedness performance, an... See More ⇒

Detailed specifications: TSP7N60M, TSF7N60M, TSP7N65M, TSF7N65M, TSP7N80M, TSF7N80M, TSP840MR, TSP8N65M, IRFP250N, YJB150G06AK, YJB150N06BQ, YJB200G06B, YJD15N10A, YJD18GP10A, YJD20N06A, YJD30N02A, YJD40N04A

Keywords - TSF8N65M MOSFET specs

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