YJB150G06AK MOSFET. Datasheet pdf. Equivalent
Type Designator: YJB150G06AK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 71 nC
trⓘ - Rise Time: 55.2 nS
Cossⓘ - Output Capacitance: 850 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO263
YJB150G06AK Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJB150G06AK Datasheet (PDF)
yjb150g06ak.pdf
RoHS COMPLIANT YJB150G06AK N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I (Silicon limited) 150A D R ( at V =10V) 3.5 mohm DS(ON) GS R ( at V =4.5V) 5.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested ESD Protected up to 2.0KV(HBM) General Description Split Gate Trench MOSFET technology Ex
yjb150n06bq.pdf
RoHS COMPLIANT YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
