YJB150G06AK Datasheet and Replacement
Type Designator: YJB150G06AK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55.2 nS
Cossⓘ - Output Capacitance: 850 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO263
YJB150G06AK substitution
YJB150G06AK Datasheet (PDF)
yjb150g06ak.pdf
RoHS COMPLIANT YJB150G06AK N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I (Silicon limited) 150A D R ( at V =10V) 3.5 mohm DS(ON) GS R ( at V =4.5V) 5.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested ESD Protected up to 2.0KV(HBM) General Description Split Gate Trench MOSFET technology Ex
yjb150n06bq.pdf
RoHS COMPLIANT YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications
Datasheet: TSF7N60M , TSP7N65M , TSF7N65M , TSP7N80M , TSF7N80M , TSP840MR , TSP8N65M , TSF8N65M , IRF630 , YJB150N06BQ , YJB200G06B , YJD15N10A , YJD18GP10A , YJD20N06A , YJD30N02A , YJD40N04A , YJD45G10A .
History: YJB200G06B | FQP13N10L | TD357EG | YJB150N06BQ | FQP13N10 | TD381BA | R6520ENX
Keywords - YJB150G06AK MOSFET datasheet
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YJB150G06AK replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: YJB200G06B | FQP13N10L | TD357EG | YJB150N06BQ | FQP13N10 | TD381BA | R6520ENX
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