All MOSFET. YJB150G06AK Datasheet

 

YJB150G06AK Datasheet and Replacement


   Type Designator: YJB150G06AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55.2 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO263
 

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YJB150G06AK Datasheet (PDF)

 ..1. Size:1175K  cn yangzhou yangjie elec
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YJB150G06AK

RoHS COMPLIANT YJB150G06AK N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I (Silicon limited) 150A D R ( at V =10V) 3.5 mohm DS(ON) GS R ( at V =4.5V) 5.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested ESD Protected up to 2.0KV(HBM) General Description Split Gate Trench MOSFET technology Ex

 8.1. Size:456K  cn yangzhou yangjie elec
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YJB150G06AK

RoHS COMPLIANT YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications

Datasheet: TSF7N60M , TSP7N65M , TSF7N65M , TSP7N80M , TSF7N80M , TSP840MR , TSP8N65M , TSF8N65M , 7N65 , YJB150N06BQ , YJB200G06B , YJD15N10A , YJD18GP10A , YJD20N06A , YJD30N02A , YJD40N04A , YJD45G10A .

History: 2SK2207 | SPD02N80C3 | AOTL66811 | IRFS9533 | TPCP8001-H | AFN3019S | IPD048N06L3G

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