YJB150G06AK Specs and Replacement

Type Designator: YJB150G06AK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55.2 nS

Cossⓘ - Output Capacitance: 850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO263

YJB150G06AK substitution

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YJB150G06AK datasheet

 ..1. Size:1175K  cn yangzhou yangjie elec
 yjb150g06ak.pdf pdf_icon

YJB150G06AK

RoHS COMPLIANT YJB150G06AK N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I (Silicon limited) 150A D R ( at V =10V) 3.5 mohm DS(ON) GS R ( at V =4.5V) 5.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested ESD Protected up to 2.0KV(HBM) General Description Split Gate Trench MOSFET technology Ex... See More ⇒

 8.1. Size:456K  cn yangzhou yangjie elec
 yjb150n06bq.pdf pdf_icon

YJB150G06AK

RoHS COMPLIANT YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications ... See More ⇒

Detailed specifications: TSF7N60M, TSP7N65M, TSF7N65M, TSP7N80M, TSF7N80M, TSP840MR, TSP8N65M, TSF8N65M, IRF630, YJB150N06BQ, YJB200G06B, YJD15N10A, YJD18GP10A, YJD20N06A, YJD30N02A, YJD40N04A, YJD45G10A

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