YJB200G06B Specs and Replacement

Type Designator: YJB200G06B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.7 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: TO263

YJB200G06B substitution

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YJB200G06B datasheet

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YJB200G06B

RoHS COMPLIANT YJB200G06B N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 200A D R ( at V =10V) 2.9 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications... See More ⇒

Detailed specifications: TSF7N65M, TSP7N80M, TSF7N80M, TSP840MR, TSP8N65M, TSF8N65M, YJB150G06AK, YJB150N06BQ, AON7408, YJD15N10A, YJD18GP10A, YJD20N06A, YJD30N02A, YJD40N04A, YJD45G10A, YJD45P03A, YJD50N03A

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