YJB200G06B MOSFET. Datasheet pdf. Equivalent
Type Designator: YJB200G06B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 200 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6.7 nS
Cossⓘ - Output Capacitance: 900 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO263
YJB200G06B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJB200G06B Datasheet (PDF)
..1. Size:1269K cn yangzhou yangjie elec
yjb200g06b.pdf
yjb200g06b.pdf
RoHS COMPLIANT YJB200G06B N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 200A D R ( at V =10V) 2.9 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications
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