YJD15N10A Specs and Replacement

Type Designator: YJD15N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 39 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO252

YJD15N10A substitution

- MOSFET ⓘ Cross-Reference Search

 

YJD15N10A datasheet

 ..1. Size:636K  cn yangzhou yangjie elec
 yjd15n10a.pdf pdf_icon

YJD15N10A

RoHS COMPLIANT YJD15N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 15A D R ( at V =10V) 110 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density ce... See More ⇒

Detailed specifications: TSP7N80M, TSF7N80M, TSP840MR, TSP8N65M, TSF8N65M, YJB150G06AK, YJB150N06BQ, YJB200G06B, 2SK3878, YJD18GP10A, YJD20N06A, YJD30N02A, YJD40N04A, YJD45G10A, YJD45P03A, YJD50N03A, YJD60N02A

Keywords - YJD15N10A MOSFET specs

 YJD15N10A cross reference

 YJD15N10A equivalent finder

 YJD15N10A pdf lookup

 YJD15N10A substitution

 YJD15N10A replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility