All MOSFET. YJD15N10A Datasheet

 

YJD15N10A Datasheet and Replacement


   Type Designator: YJD15N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO252
 

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YJD15N10A Datasheet (PDF)

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YJD15N10A

RoHS COMPLIANT YJD15N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 15A D R ( at V =10V) 110 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density ce

Datasheet: TSP7N80M , TSF7N80M , TSP840MR , TSP8N65M , TSF8N65M , YJB150G06AK , YJB150N06BQ , YJB200G06B , IRFP260 , YJD18GP10A , YJD20N06A , YJD30N02A , YJD40N04A , YJD45G10A , YJD45P03A , YJD50N03A , YJD60N02A .

History: SPB04N60S5 | P3606BEA | 2SK1101-01MR | UPA1913 | APT15F60B | BRCS250N03YA | SVS7N60DD2TR

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