All MOSFET. YJD15N10A Datasheet

 

YJD15N10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJD15N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO252

 YJD15N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJD15N10A Datasheet (PDF)

 ..1. Size:636K  cn yangzhou yangjie elec
 yjd15n10a.pdf

YJD15N10A YJD15N10A

RoHS COMPLIANT YJD15N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 15A D R ( at V =10V) 110 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density ce

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFP14N60P

 

 
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