All MOSFET. YJD15N10A Datasheet

 

YJD15N10A Datasheet and Replacement


   Type Designator: YJD15N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO252
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YJD15N10A Datasheet (PDF)

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YJD15N10A

RoHS COMPLIANT YJD15N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 15A D R ( at V =10V) 110 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density ce

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History: SML501R1GN | NP180N04TUJ | SM4186T9RL | SSW65R190S2 | WMM07N65C4 | NCE30P12BS | APT10021JFLL

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