All MOSFET. YJD18GP10A Datasheet

 

YJD18GP10A Datasheet and Replacement


   Type Designator: YJD18GP10A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
 

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YJD18GP10A Datasheet (PDF)

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YJD18GP10A

RoHS COMPLIANT YJD18GP10A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -100V DS I -18A D R ( at V =-10V) 90 mohm DS(ON) GS R ( at V =-4.5V) 110 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Low R & FOM DS(on) Extremely low switching loss

Datasheet: TSF7N80M , TSP840MR , TSP8N65M , TSF8N65M , YJB150G06AK , YJB150N06BQ , YJB200G06B , YJD15N10A , 12N60 , YJD20N06A , YJD30N02A , YJD40N04A , YJD45G10A , YJD45P03A , YJD50N03A , YJD60N02A , YJD60N04A .

History: SPN3414S23RGB | FHF4N65E

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