All MOSFET. YJD18GP10A Datasheet

 

YJD18GP10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJD18GP10A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20.1 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252

 YJD18GP10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJD18GP10A Datasheet (PDF)

 ..1. Size:736K  cn yangzhou yangjie elec
 yjd18gp10a.pdf

YJD18GP10A YJD18GP10A

RoHS COMPLIANT YJD18GP10A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -100V DS I -18A D R ( at V =-10V) 90 mohm DS(ON) GS R ( at V =-4.5V) 110 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Low R & FOM DS(on) Extremely low switching loss

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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