YJD18GP10A Specs and Replacement

Type Designator: YJD18GP10A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO252

YJD18GP10A substitution

- MOSFET ⓘ Cross-Reference Search

 

YJD18GP10A datasheet

 ..1. Size:736K  cn yangzhou yangjie elec
 yjd18gp10a.pdf pdf_icon

YJD18GP10A

RoHS COMPLIANT YJD18GP10A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -100V DS I -18A D R ( at V =-10V) 90 mohm DS(ON) GS R ( at V =-4.5V) 110 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Low R & FOM DS(on) Extremely low switching loss... See More ⇒

Detailed specifications: TSF7N80M, TSP840MR, TSP8N65M, TSF8N65M, YJB150G06AK, YJB150N06BQ, YJB200G06B, YJD15N10A, STP75NF75, YJD20N06A, YJD30N02A, YJD40N04A, YJD45G10A, YJD45P03A, YJD50N03A, YJD60N02A, YJD60N04A

Keywords - YJD18GP10A MOSFET specs

 YJD18GP10A cross reference

 YJD18GP10A equivalent finder

 YJD18GP10A pdf lookup

 YJD18GP10A substitution

 YJD18GP10A replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.