YJD30N02A Specs and Replacement

Type Designator: YJD30N02A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

YJD30N02A substitution

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YJD30N02A datasheet

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YJD30N02A

RoHS COMPLIANT YJD30N02A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 30A D R ( at V =10V) 8.0 mohm DS(ON) GS R ( at V =4.5V) 9.0 mohm DS(ON) GS R ( at V =1.8V) 14 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package... See More ⇒

Detailed specifications: TSP8N65M, TSF8N65M, YJB150G06AK, YJB150N06BQ, YJB200G06B, YJD15N10A, YJD18GP10A, YJD20N06A, IRF9540N, YJD40N04A, YJD45G10A, YJD45P03A, YJD50N03A, YJD60N02A, YJD60N04A, YJD65G10A, YJD80N03A

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