YJD30N02A MOSFET. Datasheet pdf. Equivalent
Type Designator: YJD30N02A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 305 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO252
YJD30N02A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJD30N02A Datasheet (PDF)
yjd30n02a.pdf
RoHS COMPLIANT YJD30N02A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 30A D R ( at V =10V) 8.0 mohm DS(ON) GS R ( at V =4.5V) 9.0 mohm DS(ON) GS R ( at V =1.8V) 14 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package
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