All MOSFET. YJD30N02A Datasheet

 

YJD30N02A Datasheet and Replacement


   Type Designator: YJD30N02A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

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YJD30N02A Datasheet (PDF)

 ..1. Size:591K  cn yangzhou yangjie elec
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YJD30N02A

RoHS COMPLIANT YJD30N02A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 30A D R ( at V =10V) 8.0 mohm DS(ON) GS R ( at V =4.5V) 9.0 mohm DS(ON) GS R ( at V =1.8V) 14 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package

Datasheet: TSP8N65M , TSF8N65M , YJB150G06AK , YJB150N06BQ , YJB200G06B , YJD15N10A , YJD18GP10A , YJD20N06A , IRF1010E , YJD40N04A , YJD45G10A , YJD45P03A , YJD50N03A , YJD60N02A , YJD60N04A , YJD65G10A , YJD80N03A .

History: WMN36N60C4 | RQA0008NXAQS | AM2394NE | APT6029BLL | FHP5N65B | VBA3211 | RS1E320GN

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