All MOSFET. YJD40N04A Datasheet

 

YJD40N04A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJD40N04A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 23.6 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252

 YJD40N04A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJD40N04A Datasheet (PDF)

 ..1. Size:1217K  cn yangzhou yangjie elec
 yjd40n04a.pdf

YJD40N04A YJD40N04A

RoHS COMPLIANT YJD40N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40 V DS I 40 A D R ( at V = 10V) 13.0 mohm DS(ON) GS R ( at V = 4.5V) 23.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High dens

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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