All MOSFET. YJD40N04A Datasheet

 

YJD40N04A Datasheet and Replacement


   Type Designator: YJD40N04A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252
 

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YJD40N04A Datasheet (PDF)

 ..1. Size:1217K  cn yangzhou yangjie elec
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YJD40N04A

RoHS COMPLIANT YJD40N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40 V DS I 40 A D R ( at V = 10V) 13.0 mohm DS(ON) GS R ( at V = 4.5V) 23.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High dens

Datasheet: TSF8N65M , YJB150G06AK , YJB150N06BQ , YJB200G06B , YJD15N10A , YJD18GP10A , YJD20N06A , YJD30N02A , IRF4905 , YJD45G10A , YJD45P03A , YJD50N03A , YJD60N02A , YJD60N04A , YJD65G10A , YJD80N03A , YJD80N03B .

History: BUK9K6R2-40E | 2SK4192LS | IPB260N06N3G | HM3N40R | 2SK3833 | STP22NS25Z | BLP03N10-B

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