All MOSFET. YJD45G10A Datasheet

 

YJD45G10A Datasheet and Replacement


   Type Designator: YJD45G10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 399 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252
 

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YJD45G10A Datasheet (PDF)

 ..1. Size:910K  cn yangzhou yangjie elec
 yjd45g10a.pdf pdf_icon

YJD45G10A

RoHS COMPLIANT YJD45G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 45A D R ( at V =10V) 17 mohm DS(ON) GS R ( at V =4.5V) 21.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Low R & FOM DS(on) Extremely low switching loss Excellent stability and uniformity

 9.1. Size:1132K  cn yangzhou yangjie elec
 yjd45p03a.pdf pdf_icon

YJD45G10A

RoHS COMPLIANT YJD45P03A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -45A D R ( at V =-20V) 7.0mohm DS(ON) GS R ( at V =-10V) 8.0mohm DS(ON) GS R ( at V =-4.5V) 13.0mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology High density c

Datasheet: YJB150G06AK , YJB150N06BQ , YJB200G06B , YJD15N10A , YJD18GP10A , YJD20N06A , YJD30N02A , YJD40N04A , 5N60 , YJD45P03A , YJD50N03A , YJD60N02A , YJD60N04A , YJD65G10A , YJD80N03A , YJD80N03B , YJD90N02A .

History: BLP042N10G-B | UF3205G-TA3-T | MTN4402Q8 | CMLM0574 | AP99LT06GS-HF | BSC060N10NS3G | MTN2510J3

Keywords - YJD45G10A MOSFET datasheet

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