All MOSFET. YJD45P03A Datasheet

 

YJD45P03A Datasheet and Replacement


   Type Designator: YJD45P03A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 308 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO252
 

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YJD45P03A Datasheet (PDF)

 ..1. Size:1132K  cn yangzhou yangjie elec
 yjd45p03a.pdf pdf_icon

YJD45P03A

RoHS COMPLIANT YJD45P03A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -45A D R ( at V =-20V) 7.0mohm DS(ON) GS R ( at V =-10V) 8.0mohm DS(ON) GS R ( at V =-4.5V) 13.0mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology High density c

 9.1. Size:910K  cn yangzhou yangjie elec
 yjd45g10a.pdf pdf_icon

YJD45P03A

RoHS COMPLIANT YJD45G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 45A D R ( at V =10V) 17 mohm DS(ON) GS R ( at V =4.5V) 21.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Low R & FOM DS(on) Extremely low switching loss Excellent stability and uniformity

Datasheet: YJB150N06BQ , YJB200G06B , YJD15N10A , YJD18GP10A , YJD20N06A , YJD30N02A , YJD40N04A , YJD45G10A , AO3400 , YJD50N03A , YJD60N02A , YJD60N04A , YJD65G10A , YJD80N03A , YJD80N03B , YJD90N02A , YJG15GP10A .

History: IRFP3306PBF | SSM3K7002BF | 30N06L-TM3-T

Keywords - YJD45P03A MOSFET datasheet

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