All MOSFET. YJD50N03A Datasheet

 

YJD50N03A Datasheet and Replacement


   Type Designator: YJD50N03A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 198 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252
 

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YJD50N03A Datasheet (PDF)

 ..1. Size:574K  cn yangzhou yangjie elec
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YJD50N03A

RoHS COMPLIANT YJD50N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V =10V) 9.0mohm DS(ON) GS R ( at V =4.5V) 11.0mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell

Datasheet: YJB200G06B , YJD15N10A , YJD18GP10A , YJD20N06A , YJD30N02A , YJD40N04A , YJD45G10A , YJD45P03A , SPP20N60C3 , YJD60N02A , YJD60N04A , YJD65G10A , YJD80N03A , YJD80N03B , YJD90N02A , YJG15GP10A , YJG30N06A .

History: P3606BK | 30N06L-TF1-T | MME70R380PRH | IRFP440R | CS12N65FA9R | 25N10L-TF3-T | QS8M51

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