YJD50N03A Specs and Replacement

Type Designator: YJD50N03A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 198 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO252

YJD50N03A substitution

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YJD50N03A datasheet

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YJD50N03A

RoHS COMPLIANT YJD50N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V =10V) 9.0mohm DS(ON) GS R ( at V =4.5V) 11.0mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell... See More ⇒

Detailed specifications: YJB200G06B, YJD15N10A, YJD18GP10A, YJD20N06A, YJD30N02A, YJD40N04A, YJD45G10A, YJD45P03A, K3569, YJD60N02A, YJD60N04A, YJD65G10A, YJD80N03A, YJD80N03B, YJD90N02A, YJG15GP10A, YJG30N06A

Keywords - YJD50N03A MOSFET specs

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