YJD50N03A Datasheet and Replacement
Type Designator: YJD50N03A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 198 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO252
YJD50N03A substitution
YJD50N03A Datasheet (PDF)
yjd50n03a.pdf

RoHS COMPLIANT YJD50N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V =10V) 9.0mohm DS(ON) GS R ( at V =4.5V) 11.0mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell
Datasheet: YJB200G06B , YJD15N10A , YJD18GP10A , YJD20N06A , YJD30N02A , YJD40N04A , YJD45G10A , YJD45P03A , SPP20N60C3 , YJD60N02A , YJD60N04A , YJD65G10A , YJD80N03A , YJD80N03B , YJD90N02A , YJG15GP10A , YJG30N06A .
History: 19N10L-TN3-R | HM90N06D | IXTH60N20L2 | 12N70KL-TF2-T | JCS620CT | NCEAP40T11AK | BSH203
Keywords - YJD50N03A MOSFET datasheet
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History: 19N10L-TN3-R | HM90N06D | IXTH60N20L2 | 12N70KL-TF2-T | JCS620CT | NCEAP40T11AK | BSH203



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