All MOSFET. YJD60N04A Datasheet

 

YJD60N04A Datasheet and Replacement


   Type Designator: YJD60N04A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO252
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YJD60N04A Datasheet (PDF)

 ..1. Size:620K  cn yangzhou yangjie elec
 yjd60n04a.pdf pdf_icon

YJD60N04A

RoHS COMPLIANT YJD60N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40V DS I 60A D R ( at V =10V) 7.0 mohm DS(ON) GS R ( at V =4.5V) 9.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cel

 7.1. Size:639K  cn yangzhou yangjie elec
 yjd60n02a.pdf pdf_icon

YJD60N04A

RoHS COMPLIANT YJD60N02A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 60A D R ( at V =4.5V) 6.0mohm DS(ON) GS R ( at V =2.5V) 8.8mohm DS(ON) GS R ( at V =1.8V) 14mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package f

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: BLS60R380F-U | HM4822B | MCH3479 | NTP30N06 | AP15P15GM | 2SK4204LS | DH8004

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