YJD65G10A Specs and Replacement

Type Designator: YJD65G10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34.8 nS

Cossⓘ - Output Capacitance: 797 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm

Package: TO252

YJD65G10A substitution

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YJD65G10A datasheet

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YJD65G10A

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Detailed specifications: YJD20N06A, YJD30N02A, YJD40N04A, YJD45G10A, YJD45P03A, YJD50N03A, YJD60N02A, YJD60N04A, SPP20N60C3, YJD80N03A, YJD80N03B, YJD90N02A, YJG15GP10A, YJG30N06A, YJG40G10A, YJG50N03A, YJG70G06A

Keywords - YJD65G10A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.