All MOSFET. YJD65G10A Datasheet

 

YJD65G10A Datasheet and Replacement


   Type Designator: YJD65G10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34.8 nS
   Cossⓘ - Output Capacitance: 797 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
   Package: TO252
 

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YJD65G10A Datasheet (PDF)

 ..1. Size:1376K  cn yangzhou yangjie elec
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YJD65G10A

RoHS COMPLIANT YJD65G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 65A D R ( at V =10V) 8.6 mohm DS(ON) GS R ( at V =4.5V) 11.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Low R & FOM DS(on) Extremely low switching loss Excellent stability and uniformity

Datasheet: YJD20N06A , YJD30N02A , YJD40N04A , YJD45G10A , YJD45P03A , YJD50N03A , YJD60N02A , YJD60N04A , IRF9540N , YJD80N03A , YJD80N03B , YJD90N02A , YJG15GP10A , YJG30N06A , YJG40G10A , YJG50N03A , YJG70G06A .

History: 2SK2912 | STS2309A | RSS100N03TB | STW13NK50Z | IXFE44N50QD2 | SRH03P142LDTR-G | BUK765R3-40E

Keywords - YJD65G10A MOSFET datasheet

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