YJD80N03A Specs and Replacement

Type Designator: YJD80N03A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.4 nS

Cossⓘ - Output Capacitance: 323 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO252

YJD80N03A substitution

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YJD80N03A datasheet

 ..1. Size:816K  cn yangzhou yangjie elec
 yjd80n03a.pdf pdf_icon

YJD80N03A

RoHS COMPLIANT YJD80N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 80A D R ( at V =10V) 4.5mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DS General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell... See More ⇒

 6.1. Size:620K  cn yangzhou yangjie elec
 yjd80n03b.pdf pdf_icon

YJD80N03A

RoHS COMPLIANT YJD80N03B N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 80A D R ( at V =10V) 5.5 mohm DS(ON) GS R ( at V =4.5V) 8.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cel... See More ⇒

Detailed specifications: YJD30N02A, YJD40N04A, YJD45G10A, YJD45P03A, YJD50N03A, YJD60N02A, YJD60N04A, YJD65G10A, SKD502T, YJD80N03B, YJD90N02A, YJG15GP10A, YJG30N06A, YJG40G10A, YJG50N03A, YJG70G06A, YJG80G06B

Keywords - YJD80N03A MOSFET specs

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