YJD90N02A Specs and Replacement

Type Designator: YJD90N02A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 701 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO252

YJD90N02A substitution

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YJD90N02A datasheet

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YJD90N02A

RoHS COMPLIANT YJD90N02A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 90A D R ( at V =4.5V) 4.5mohm DS(ON) GS R ( at V =2.5V) 5.0mohm DS(ON) GS R ( at V =1.8V) 7.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package ... See More ⇒

Detailed specifications: YJD45G10A, YJD45P03A, YJD50N03A, YJD60N02A, YJD60N04A, YJD65G10A, YJD80N03A, YJD80N03B, 13N50, YJG15GP10A, YJG30N06A, YJG40G10A, YJG50N03A, YJG70G06A, YJG80G06B, YJG85G06AK, YJG90G10A

Keywords - YJD90N02A MOSFET specs

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