YJG30N06A MOSFET. Datasheet pdf. Equivalent
Type Designator: YJG30N06A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 51 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 132 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: PDFN5X6
YJG30N06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJG30N06A Datasheet (PDF)
..1. Size:1132K cn yangzhou yangjie elec
yjg30n06a.pdf
yjg30n06a.pdf
RoHS COMPLIANT YJG30N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 30A D R ( at V = 10V) 20mohm DS(ON) GS R ( at V = 4.5V) 23mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications DC-DC Converters
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