All MOSFET. YJG30N06A Datasheet

 

YJG30N06A Datasheet and Replacement


   Type Designator: YJG30N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: PDFN5X6
 

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YJG30N06A Datasheet (PDF)

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YJG30N06A

RoHS COMPLIANT YJG30N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 30A D R ( at V = 10V) 20mohm DS(ON) GS R ( at V = 4.5V) 23mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications DC-DC Converters

Datasheet: YJD50N03A , YJD60N02A , YJD60N04A , YJD65G10A , YJD80N03A , YJD80N03B , YJD90N02A , YJG15GP10A , 4N60 , YJG40G10A , YJG50N03A , YJG70G06A , YJG80G06B , YJG85G06AK , YJG90G10A , YJJ09N03A , YJL02N10A .

History: SI4622DY | VBZL80N03

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