YJG40G10A Specs and Replacement

Type Designator: YJG40G10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 399 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm

Package: PDFN5X6

YJG40G10A substitution

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YJG40G10A datasheet

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YJG40G10A

RoHS COMPLIANT YJG40G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 40A D R ( at V =10V) 17.5 mohm DS(ON) GS R ( at V =4.5V) 21.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Excellent package for heat dissipation High densit... See More ⇒

Detailed specifications: YJD60N02A, YJD60N04A, YJD65G10A, YJD80N03A, YJD80N03B, YJD90N02A, YJG15GP10A, YJG30N06A, 5N65, YJG50N03A, YJG70G06A, YJG80G06B, YJG85G06AK, YJG90G10A, YJJ09N03A, YJL02N10A, YJL03G10A

Keywords - YJG40G10A MOSFET specs

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