All MOSFET. YJG40G10A Datasheet

 

YJG40G10A Datasheet and Replacement


   Type Designator: YJG40G10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 399 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: PDFN5X6
 

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YJG40G10A Datasheet (PDF)

 ..1. Size:1408K  cn yangzhou yangjie elec
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YJG40G10A

RoHS COMPLIANT YJG40G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 40A D R ( at V =10V) 17.5 mohm DS(ON) GS R ( at V =4.5V) 21.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Excellent package for heat dissipation High densit

Datasheet: YJD60N02A , YJD60N04A , YJD65G10A , YJD80N03A , YJD80N03B , YJD90N02A , YJG15GP10A , YJG30N06A , 4435 , YJG50N03A , YJG70G06A , YJG80G06B , YJG85G06AK , YJG90G10A , YJJ09N03A , YJL02N10A , YJL03G10A .

History: CMT2N7002K | 2SJ259 | GP2M010A065X | SVG032R4NL3 | 30N20 | IXTP12N65X2 | IXTH6N100D2

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