YJG40G10A MOSFET. Datasheet pdf. Equivalent
Type Designator: YJG40G10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 399 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
Package: PDFN5X6
YJG40G10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJG40G10A Datasheet (PDF)
..1. Size:1408K cn yangzhou yangjie elec
yjg40g10a.pdf
yjg40g10a.pdf
RoHS COMPLIANT YJG40G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 40A D R ( at V =10V) 17.5 mohm DS(ON) GS R ( at V =4.5V) 21.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Excellent package for heat dissipation High densit
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
