YJG50N03A MOSFET. Datasheet pdf. Equivalent
Type Designator: YJG50N03A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 54 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 323 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
Package: PDFN5X6
YJG50N03A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJG50N03A Datasheet (PDF)
yjg50n03a.pdf
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RoHS COMPLIANT YJG50N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V = 10V) 4.7mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DSGeneral Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density ce
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