All MOSFET. YJG50N03A Datasheet

 

YJG50N03A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJG50N03A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 54 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 323 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: PDFN5X6

 YJG50N03A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJG50N03A Datasheet (PDF)

 ..1. Size:1339K  cn yangzhou yangjie elec
 yjg50n03a.pdf

YJG50N03A YJG50N03A

RoHS COMPLIANT YJG50N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V = 10V) 4.7mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DSGeneral Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density ce

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History: BRCS60N02DP | CSR24N15D | CSD18543Q3A | 3N203A | ZVN4210A

 

 
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