YJG50N03A Specs and Replacement

Type Designator: YJG50N03A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 323 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm

Package: PDFN5X6

YJG50N03A substitution

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YJG50N03A datasheet

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YJG50N03A

RoHS COMPLIANT YJG50N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 50A D R ( at V = 10V) 4.7mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DS General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density ce... See More ⇒

Detailed specifications: YJD60N04A, YJD65G10A, YJD80N03A, YJD80N03B, YJD90N02A, YJG15GP10A, YJG30N06A, YJG40G10A, IRF1010E, YJG70G06A, YJG80G06B, YJG85G06AK, YJG90G10A, YJJ09N03A, YJL02N10A, YJL03G10A, YJL03N06A

Keywords - YJG50N03A MOSFET specs

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