YJG70G06A Specs and Replacement

Type Designator: YJG70G06A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: PDFN5060-8L

YJG70G06A substitution

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YJG70G06A datasheet

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YJG70G06A

RoHS COMPLIANT YJG70G06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 70A D R ( at V =10V) 7.5 mohm DS(ON) GS R ( at V =4.5V) 9.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation High density ... See More ⇒

Detailed specifications: YJD65G10A, YJD80N03A, YJD80N03B, YJD90N02A, YJG15GP10A, YJG30N06A, YJG40G10A, YJG50N03A, IRFB3607, YJG80G06B, YJG85G06AK, YJG90G10A, YJJ09N03A, YJL02N10A, YJL03G10A, YJL03N06A, YJL05N06AL

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.