All MOSFET. YJG70G06A Datasheet

 

YJG70G06A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJG70G06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: PDFN5060-8L

 YJG70G06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJG70G06A Datasheet (PDF)

 ..1. Size:912K  cn yangzhou yangjie elec
 yjg70g06a.pdf

YJG70G06A YJG70G06A

RoHS COMPLIANT YJG70G06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 70A D R ( at V =10V) 7.5 mohm DS(ON) GS R ( at V =4.5V) 9.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation High density

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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