YJG80G06B MOSFET. Datasheet pdf. Equivalent
Type Designator: YJG80G06B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 66 nC
trⓘ - Rise Time: 37.4 nS
Cossⓘ - Output Capacitance: 780 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: PDFN5060
YJG80G06B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJG80G06B Datasheet (PDF)
..1. Size:1262K cn yangzhou yangjie elec
yjg80g06b.pdf
yjg80g06b.pdf
RoHS COMPLIANT YJG80G06B N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS 60V ID 80A RDS(ON)( at VGS=10V) 4.2 mohm RDS(ON)( at VGS=4.5V) 5.2 mohm 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for
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