All MOSFET. YJG80G06B Datasheet

 

YJG80G06B Datasheet and Replacement


   Type Designator: YJG80G06B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37.4 nS
   Cossⓘ - Output Capacitance: 780 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: PDFN5060
 

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YJG80G06B Datasheet (PDF)

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YJG80G06B

RoHS COMPLIANT YJG80G06B N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS 60V ID 80A RDS(ON)( at VGS=10V) 4.2 mohm RDS(ON)( at VGS=4.5V) 5.2 mohm 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for

Datasheet: YJD80N03A , YJD80N03B , YJD90N02A , YJG15GP10A , YJG30N06A , YJG40G10A , YJG50N03A , YJG70G06A , IRLZ44N , YJG85G06AK , YJG90G10A , YJJ09N03A , YJL02N10A , YJL03G10A , YJL03N06A , YJL05N06AL , YJL07P03AL .

History: SSF2N60D2 | AONS66609 | TK34A10N1 | FTK3139K | OM6105SC | BSC057N03LSG | SWN4N70D1

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