YJG80G06B Specs and Replacement

Type Designator: YJG80G06B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37.4 nS

Cossⓘ - Output Capacitance: 780 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: PDFN5060

YJG80G06B substitution

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YJG80G06B datasheet

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YJG80G06B

RoHS COMPLIANT YJG80G06B N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS 60V ID 80A RDS(ON)( at VGS=10V) 4.2 mohm RDS(ON)( at VGS=4.5V) 5.2 mohm 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for... See More ⇒

Detailed specifications: YJD80N03A, YJD80N03B, YJD90N02A, YJG15GP10A, YJG30N06A, YJG40G10A, YJG50N03A, YJG70G06A, AON6380, YJG85G06AK, YJG90G10A, YJJ09N03A, YJL02N10A, YJL03G10A, YJL03N06A, YJL05N06AL, YJL07P03AL

Keywords - YJG80G06B MOSFET specs

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