All MOSFET. YJG85G06AK Datasheet

 

YJG85G06AK Datasheet and Replacement


   Type Designator: YJG85G06AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55.2 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: PDFN5060
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YJG85G06AK Datasheet (PDF)

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YJG85G06AK

RoHS COMPLIANT YJG85G06AK N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS 60V ID 85A RDS(ON)( at VGS=10V) 3.7 mohm RDS(ON)( at VGS=4.5V) 5.0 mohm 100% UIS Tested 100% VDS Tested ESD Protected up to 2.0KV(HBM) General Description Split Gate Trench MOSFET technology Excellent package for heat dissipat

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PPMT20V3 | HLML6401 | DMG9N65CT | STS4DPFS30L | IXFR15N100Q3 | FQA17N40 | AP85T03GH-HF

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