All MOSFET. YJG85G06AK Datasheet

 

YJG85G06AK Datasheet and Replacement


   Type Designator: YJG85G06AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55.2 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: PDFN5060
 

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YJG85G06AK Datasheet (PDF)

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YJG85G06AK

RoHS COMPLIANT YJG85G06AK N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS 60V ID 85A RDS(ON)( at VGS=10V) 3.7 mohm RDS(ON)( at VGS=4.5V) 5.0 mohm 100% UIS Tested 100% VDS Tested ESD Protected up to 2.0KV(HBM) General Description Split Gate Trench MOSFET technology Excellent package for heat dissipat

Datasheet: YJD80N03B , YJD90N02A , YJG15GP10A , YJG30N06A , YJG40G10A , YJG50N03A , YJG70G06A , YJG80G06B , AO4407 , YJG90G10A , YJJ09N03A , YJL02N10A , YJL03G10A , YJL03N06A , YJL05N06AL , YJL07P03AL , YJL2101W .

History: NCE60N670K | BLS60R150F-W | BUK7Y72-80E

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