All MOSFET. YJG85G06AK Datasheet

 

YJG85G06AK Datasheet and Replacement


   Type Designator: YJG85G06AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55.2 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: PDFN5060
 

 YJG85G06AK substitution

   - MOSFET ⓘ Cross-Reference Search

 

YJG85G06AK Datasheet (PDF)

 ..1. Size:1148K  cn yangzhou yangjie elec
 yjg85g06ak.pdf pdf_icon

YJG85G06AK

RoHS COMPLIANT YJG85G06AK N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS 60V ID 85A RDS(ON)( at VGS=10V) 3.7 mohm RDS(ON)( at VGS=4.5V) 5.0 mohm 100% UIS Tested 100% VDS Tested ESD Protected up to 2.0KV(HBM) General Description Split Gate Trench MOSFET technology Excellent package for heat dissipat

Datasheet: YJD80N03B , YJD90N02A , YJG15GP10A , YJG30N06A , YJG40G10A , YJG50N03A , YJG70G06A , YJG80G06B , AO4407 , YJG90G10A , YJJ09N03A , YJL02N10A , YJL03G10A , YJL03N06A , YJL05N06AL , YJL07P03AL , YJL2101W .

History: SIHF9530S | AP9973GJ-HF | SFF440 | CEDM7004VL

Keywords - YJG85G06AK MOSFET datasheet

 YJG85G06AK cross reference
 YJG85G06AK equivalent finder
 YJG85G06AK lookup
 YJG85G06AK substitution
 YJG85G06AK replacement

 

 
Back to Top

 


 
.