All MOSFET. YJJ09N03A Datasheet

 

YJJ09N03A Datasheet and Replacement


   Type Designator: YJJ09N03A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 201 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOT23-6L
 

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YJJ09N03A Datasheet (PDF)

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YJJ09N03A

RoHS COMPLIANT YJJ09N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 9A D R ( at V = 10V) 15mohm DS(ON) GS R ( at V = 4.5V) 18mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switching Applications Battery protection

Datasheet: YJG15GP10A , YJG30N06A , YJG40G10A , YJG50N03A , YJG70G06A , YJG80G06B , YJG85G06AK , YJG90G10A , IRFP450 , YJL02N10A , YJL03G10A , YJL03N06A , YJL05N06AL , YJL07P03AL , YJL2101W , YJL2102W , YJL2300A .

History: MTN13N50E3 | UPA1917 | UTT25P10G-TN3-R | IPT019N08N5 | MMP6965 | PT530BA | MMN404

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