YJJ09N03A Specs and Replacement

Type Designator: YJJ09N03A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 201 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SOT23-6L

YJJ09N03A substitution

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YJJ09N03A datasheet

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YJJ09N03A

RoHS COMPLIANT YJJ09N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 9A D R ( at V = 10V) 15mohm DS(ON) GS R ( at V = 4.5V) 18mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switching Applications Battery protection ... See More ⇒

Detailed specifications: YJG15GP10A, YJG30N06A, YJG40G10A, YJG50N03A, YJG70G06A, YJG80G06B, YJG85G06AK, YJG90G10A, NCEP15T14, YJL02N10A, YJL03G10A, YJL03N06A, YJL05N06AL, YJL07P03AL, YJL2101W, YJL2102W, YJL2300A

Keywords - YJJ09N03A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.