All MOSFET. YJJ09N03A Datasheet

 

YJJ09N03A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJJ09N03A
   Marking Code: 0309
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23.6 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 201 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOT23-6L

 YJJ09N03A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJJ09N03A Datasheet (PDF)

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 yjj09n03a.pdf

YJJ09N03A YJJ09N03A

RoHS COMPLIANT YJJ09N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 9A D R ( at V = 10V) 15mohm DS(ON) GS R ( at V = 4.5V) 18mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switching Applications Battery protection

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