All MOSFET. YJL02N10A Datasheet

 

YJL02N10A Datasheet and Replacement


   Type Designator: YJL02N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT23
 

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YJL02N10A Datasheet (PDF)

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YJL02N10A

RoHS COMPLIANT YJL02N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 2.0A D R ( at V =10V) 280 mohm DS(ON) GS R ( at V =4.5V) 310 mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) MSL LEVEL1

Datasheet: YJG30N06A , YJG40G10A , YJG50N03A , YJG70G06A , YJG80G06B , YJG85G06AK , YJG90G10A , YJJ09N03A , IRFP250 , YJL03G10A , YJL03N06A , YJL05N06AL , YJL07P03AL , YJL2101W , YJL2102W , YJL2300A , YJL2301C .

History: LSB60R092GF | WMN15N80M3 | AP9412CGM-HF | WMM16N65SR | CTN2302 | HY3403V

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