YJL02N10A MOSFET. Datasheet pdf. Equivalent
Type Designator: YJL02N10A
Marking Code: 1002.
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.3 nC
trⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 88 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: SOT23
YJL02N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJL02N10A Datasheet (PDF)
yjl02n10a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
RoHS COMPLIANT YJL02N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 2.0A D R ( at V =10V) 280 mohm DS(ON) GS R ( at V =4.5V) 310 mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) MSL LEVEL1
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .