YJL02N10A Specs and Replacement

Type Designator: YJL02N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: SOT23

YJL02N10A substitution

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YJL02N10A datasheet

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YJL02N10A

RoHS COMPLIANT YJL02N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 2.0A D R ( at V =10V) 280 mohm DS(ON) GS R ( at V =4.5V) 310 mohm DS(ON) GS General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) MSL LEVEL1 ... See More ⇒

Detailed specifications: YJG30N06A, YJG40G10A, YJG50N03A, YJG70G06A, YJG80G06B, YJG85G06AK, YJG90G10A, YJJ09N03A, AON7506, YJL03G10A, YJL03N06A, YJL05N06AL, YJL07P03AL, YJL2101W, YJL2102W, YJL2300A, YJL2301C

Keywords - YJL02N10A MOSFET specs

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