All MOSFET. YJL03G10A Datasheet

 

YJL03G10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJL03G10A
   Marking Code: 1003.
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.3 nC
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT23

 YJL03G10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJL03G10A Datasheet (PDF)

 ..1. Size:732K  cn yangzhou yangjie elec
 yjl03g10a.pdf

YJL03G10A YJL03G10A

RoHS COMPLIANT YJL03G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 3.0A D R ( at V =10V) 140 mohm DS(ON) GSGeneral Description Low R & FOM DS(on) Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic power supply

 9.1. Size:583K  cn yangzhou yangjie elec
 yjl03n06a.pdf

YJL03G10A YJL03G10A

RoHS COMPLIANT YJL03N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 3.0A D R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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