YJL05N06AL MOSFET. Datasheet pdf. Equivalent
Type Designator: YJL05N06AL
Marking Code: 6005.
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 26.4 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: SOT23
YJL05N06AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJL05N06AL Datasheet (PDF)
..1. Size:1256K cn yangzhou yangjie elec
yjl05n06al.pdf
yjl05n06al.pdf
RoHS COMPLIANT YJL05N06AL N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 5.0A D R ( at V = 10V) 44mohm DS(ON) GS R ( at V = 4.5V) 49mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON)Applications PWM application Load switch Absolut
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