YJL05N06AL Specs and Replacement

Type Designator: YJL05N06AL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: SOT23

YJL05N06AL substitution

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YJL05N06AL datasheet

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YJL05N06AL

RoHS COMPLIANT YJL05N06AL N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 5.0A D R ( at V = 10V) 44mohm DS(ON) GS R ( at V = 4.5V) 49mohm DS(ON) GS General Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON) Applications PWM application Load switch Absolut... See More ⇒

Detailed specifications: YJG70G06A, YJG80G06B, YJG85G06AK, YJG90G10A, YJJ09N03A, YJL02N10A, YJL03G10A, YJL03N06A, TK10A60D, YJL07P03AL, YJL2101W, YJL2102W, YJL2300A, YJL2301C, YJL2301D, YJL2301F, YJL2301G

Keywords - YJL05N06AL MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.