All MOSFET. YJL05N06AL Datasheet

 

YJL05N06AL Datasheet and Replacement


   Type Designator: YJL05N06AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: SOT23
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YJL05N06AL Datasheet (PDF)

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YJL05N06AL

RoHS COMPLIANT YJL05N06AL N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 5.0A D R ( at V = 10V) 44mohm DS(ON) GS R ( at V = 4.5V) 49mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON)Applications PWM application Load switch Absolut

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History: FDD6782A | SM4186T9RL | APT10021JFLL | NCE30P12BS | SSW65R190S2 | NP180N04TUJ | SRT10N160LD

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