All MOSFET. YJL07P03AL Datasheet

 

YJL07P03AL Datasheet and Replacement


   Type Designator: YJL07P03AL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 327 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT23
 

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YJL07P03AL Datasheet (PDF)

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YJL07P03AL

RoHS COMPLIANT YJL07P03AL P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -7.0A D R ( at V =-10V) 25 mohm DS(ON) GS R ( at V =-4.5V) 36 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Battery prote

Datasheet: YJG80G06B , YJG85G06AK , YJG90G10A , YJJ09N03A , YJL02N10A , YJL03G10A , YJL03N06A , YJL05N06AL , P60NF06 , YJL2101W , YJL2102W , YJL2300A , YJL2301C , YJL2301D , YJL2301F , YJL2301G , YJL2302A .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

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