YJL07P03AL Specs and Replacement

Type Designator: YJL07P03AL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 327 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOT23

YJL07P03AL substitution

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YJL07P03AL datasheet

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YJL07P03AL

RoHS COMPLIANT YJL07P03AL P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -7.0A D R ( at V =-10V) 25 mohm DS(ON) GS R ( at V =-4.5V) 36 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Battery prote... See More ⇒

Detailed specifications: YJG80G06B, YJG85G06AK, YJG90G10A, YJJ09N03A, YJL02N10A, YJL03G10A, YJL03N06A, YJL05N06AL, AO4407, YJL2101W, YJL2102W, YJL2300A, YJL2301C, YJL2301D, YJL2301F, YJL2301G, YJL2302A

Keywords - YJL07P03AL MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs