All MOSFET. YJL2101W Datasheet

 

YJL2101W Datasheet and Replacement


   Type Designator: YJL2101W
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT323
 

 YJL2101W substitution

   - MOSFET ⓘ Cross-Reference Search

 

YJL2101W Datasheet (PDF)

 ..1. Size:424K  cn yangzhou yangjie elec
 yjl2101w.pdf pdf_icon

YJL2101W

RoHS COMPLIANT YJL2101W P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -2.0A D R ( at V =-4.5V) 130 mohm DS(ON) GS R ( at V =-2.5V) 170 mohm DS(ON) GS R ( at V =-1.8V) 250 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications

 8.1. Size:758K  cn yangzhou yangjie elec
 yjl2102w.pdf pdf_icon

YJL2101W

RoHS COMPLIANT YJL2102W N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 3.0A D R ( at V =4.5V) 70 mohm DS(ON) GS R ( at V =2.5V) 98 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Ma

Datasheet: YJG85G06AK , YJG90G10A , YJJ09N03A , YJL02N10A , YJL03G10A , YJL03N06A , YJL05N06AL , YJL07P03AL , 18N50 , YJL2102W , YJL2300A , YJL2301C , YJL2301D , YJL2301F , YJL2301G , YJL2302A , YJL2302B .

Keywords - YJL2101W MOSFET datasheet

 YJL2101W cross reference
 YJL2101W equivalent finder
 YJL2101W lookup
 YJL2101W substitution
 YJL2101W replacement

 

 
Back to Top

 


 
.