YJL2101W Specs and Replacement

Type Designator: YJL2101W

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT323

YJL2101W substitution

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YJL2101W datasheet

 ..1. Size:424K  cn yangzhou yangjie elec
 yjl2101w.pdf pdf_icon

YJL2101W

RoHS COMPLIANT YJL2101W P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -2.0A D R ( at V =-4.5V) 130 mohm DS(ON) GS R ( at V =-2.5V) 170 mohm DS(ON) GS R ( at V =-1.8V) 250 mohm DS(ON) GS General Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications ... See More ⇒

 8.1. Size:758K  cn yangzhou yangjie elec
 yjl2102w.pdf pdf_icon

YJL2101W

RoHS COMPLIANT YJL2102W N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 3.0A D R ( at V =4.5V) 70 mohm DS(ON) GS R ( at V =2.5V) 98 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Ma... See More ⇒

Detailed specifications: YJG85G06AK, YJG90G10A, YJJ09N03A, YJL02N10A, YJL03G10A, YJL03N06A, YJL05N06AL, YJL07P03AL, BS170, YJL2102W, YJL2300A, YJL2301C, YJL2301D, YJL2301F, YJL2301G, YJL2302A, YJL2302B

Keywords - YJL2101W MOSFET specs

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