All MOSFET. YJL2102W Datasheet

 

YJL2102W Datasheet and Replacement


   Type Designator: YJL2102W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT323
      - MOSFET Cross-Reference Search

 

YJL2102W Datasheet (PDF)

 ..1. Size:758K  cn yangzhou yangjie elec
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YJL2102W

RoHS COMPLIANT YJL2102W N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 3.0A D R ( at V =4.5V) 70 mohm DS(ON) GS R ( at V =2.5V) 98 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Ma

 8.1. Size:424K  cn yangzhou yangjie elec
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YJL2102W

RoHS COMPLIANT YJL2101W P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -2.0A D R ( at V =-4.5V) 130 mohm DS(ON) GS R ( at V =-2.5V) 170 mohm DS(ON) GS R ( at V =-1.8V) 250 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP6679GI-HF | H7N1002LM | FCPF7N60YDTU | SM6A12NSFP | SPD04N60S5

Keywords - YJL2102W MOSFET datasheet

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