All MOSFET. YJL2102W Datasheet

 

YJL2102W Datasheet and Replacement


   Type Designator: YJL2102W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT323
 

 YJL2102W substitution

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YJL2102W Datasheet (PDF)

 ..1. Size:758K  cn yangzhou yangjie elec
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YJL2102W

RoHS COMPLIANT YJL2102W N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 3.0A D R ( at V =4.5V) 70 mohm DS(ON) GS R ( at V =2.5V) 98 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Ma

 8.1. Size:424K  cn yangzhou yangjie elec
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YJL2102W

RoHS COMPLIANT YJL2101W P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -2.0A D R ( at V =-4.5V) 130 mohm DS(ON) GS R ( at V =-2.5V) 170 mohm DS(ON) GS R ( at V =-1.8V) 250 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications

Datasheet: YJG90G10A , YJJ09N03A , YJL02N10A , YJL03G10A , YJL03N06A , YJL05N06AL , YJL07P03AL , YJL2101W , 10N65 , YJL2300A , YJL2301C , YJL2301D , YJL2301F , YJL2301G , YJL2302A , YJL2302B , YJL2303A .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - YJL2102W MOSFET datasheet

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