All MOSFET. YJL3407A Datasheet

 

YJL3407A Datasheet and Replacement


   Type Designator: YJL3407A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT23
 

 YJL3407A substitution

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YJL3407A Datasheet (PDF)

 ..1. Size:706K  cn yangzhou yangjie elec
yjl3407a.pdf pdf_icon

YJL3407A

RoHS COMPLIANT YJL3407A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.1A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Battery protect

 8.1. Size:642K  cn yangzhou yangjie elec
yjl3401a.pdf pdf_icon

YJL3407A

RoHS COMPLIANT YJL3401A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed s

 8.2. Size:578K  cn yangzhou yangjie elec
yjl3404a.pdf pdf_icon

YJL3407A

RoHS COMPLIANT YJL3404A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 29 mohm DS(ON) GS R ( at V =4.5V) 40 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switching Applications Battery protection

 8.3. Size:574K  cn yangzhou yangjie elec
yjl3400a.pdf pdf_icon

YJL3407A

RoHS COMPLIANT YJL3400A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 27 mohm DS(ON) GS R ( at V =4.5V) 33 mohm DS(ON) GS R ( at V =2.5V) 51 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switch

Datasheet: YJL2312AL , YJL3134K , YJL3134KW , YJL3139KDW , YJL3139KT , YJL3400A , YJL3401A , YJL3404A , IRFZ48N , YJL3415A , YJL3416A , YJP150N06AQ , YJP200G06A , YJP70G10A , YJQ20N04A , YJQ30N03A , YJQ3400A .

History: PE532DY | OSG60R1K8PF

Keywords - YJL3407A MOSFET datasheet

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