YJL3407A
MOSFET. Datasheet pdf. Equivalent
Type Designator: YJL3407A
Marking Code: 3407.
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 4.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.8
nC
trⓘ - Rise Time: 61
nS
Cossⓘ -
Output Capacitance: 98
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
SOT23
YJL3407A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJL3407A
Datasheet (PDF)
..1. Size:706K cn yangzhou yangjie elec
yjl3407a.pdf 
RoHS COMPLIANT YJL3407A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.1A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Battery protect
8.1. Size:642K cn yangzhou yangjie elec
yjl3401a.pdf
RoHS COMPLIANT YJL3401A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed s
8.2. Size:578K cn yangzhou yangjie elec
yjl3404a.pdf
RoHS COMPLIANT YJL3404A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 29 mohm DS(ON) GS R ( at V =4.5V) 40 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switching Applications Battery protection
8.3. Size:574K cn yangzhou yangjie elec
yjl3400a.pdf
RoHS COMPLIANT YJL3400A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 27 mohm DS(ON) GS R ( at V =4.5V) 33 mohm DS(ON) GS R ( at V =2.5V) 51 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switch
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