YJP70G10A MOSFET. Datasheet pdf. Equivalent
Type Designator: YJP70G10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 32 nC
Rise Time (tr): 14.4 nS
Drain-Source Capacitance (Cd): 797 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0086 Ohm
Package: TO220
YJP70G10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJP70G10A Datasheet (PDF)
..1. Size:1568K cn yangzhou yangjie elec
yjp70g10a.pdf
yjp70g10a.pdf
RoHS COMPLIANT YJP70G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 70A D R ( at V =10V) 8.6 mohm DS(ON) GS R ( at V =4.5V) 11 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Low R & FOM DS(on) Extremely low switching loss Excellent stability and uniformity
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
