All MOSFET. YJP70G10A Datasheet

 

YJP70G10A Datasheet and Replacement


   Type Designator: YJP70G10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.4 nS
   Cossⓘ - Output Capacitance: 797 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
   Package: TO220
 

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YJP70G10A Datasheet (PDF)

 ..1. Size:1568K  cn yangzhou yangjie elec
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YJP70G10A

RoHS COMPLIANT YJP70G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 70A D R ( at V =10V) 8.6 mohm DS(ON) GS R ( at V =4.5V) 11 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Low R & FOM DS(on) Extremely low switching loss Excellent stability and uniformity

Datasheet: YJL3400A , YJL3401A , YJL3404A , YJL3407A , YJL3415A , YJL3416A , YJP150N06AQ , YJP200G06A , P0903BDG , YJQ20N04A , YJQ30N03A , YJQ3400A , YJQ3415A , YJQ35N04A , YJQ40G10A , YJQ40P03A , YJQ4666B .

History: IRFU3707 | SMIRF8N65T1TL | R5009ANX | 2SK3472 | NTMFS5C468NLT1G | FTK35N03PDFN56 | AP55T06GS-HF

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