YJP70G10A Specs and Replacement

Type Designator: YJP70G10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.4 nS

Cossⓘ - Output Capacitance: 797 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm

Package: TO220

YJP70G10A substitution

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YJP70G10A datasheet

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YJP70G10A

RoHS COMPLIANT YJP70G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 70A D R ( at V =10V) 8.6 mohm DS(ON) GS R ( at V =4.5V) 11 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Low R & FOM DS(on) Extremely low switching loss Excellent stability and uniformity ... See More ⇒

Detailed specifications: YJL3400A, YJL3401A, YJL3404A, YJL3407A, YJL3415A, YJL3416A, YJP150N06AQ, YJP200G06A, IRF830, YJQ20N04A, YJQ30N03A, YJQ3400A, YJQ3415A, YJQ35N04A, YJQ40G10A, YJQ40P03A, YJQ4666B

Keywords - YJP70G10A MOSFET specs

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