YJQ20N04A Specs and Replacement

Type Designator: YJQ20N04A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 128 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DFN3.3X3.3

YJQ20N04A substitution

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YJQ20N04A datasheet

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YJQ20N04A

RoHS COMPLIANT YJQ20N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40 V DS I 20 A D R ( at V = 10V) 14.0 mohm DS(ON) GS R ( at V = 4.5V) 18.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High dens... See More ⇒

Detailed specifications: YJL3401A, YJL3404A, YJL3407A, YJL3415A, YJL3416A, YJP150N06AQ, YJP200G06A, YJP70G10A, IRLB3034, YJQ30N03A, YJQ3400A, YJQ3415A, YJQ35N04A, YJQ40G10A, YJQ40P03A, YJQ4666B, YJQ55P02A

Keywords - YJQ20N04A MOSFET specs

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