YJQ20N04A Datasheet and Replacement
Type Designator: YJQ20N04A
Marking Code: Q20N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 23.6 nC
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 128 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: DFN3.3X3.3
YJQ20N04A substitution
YJQ20N04A Datasheet (PDF)
yjq20n04a.pdf
RoHS COMPLIANT YJQ20N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40 V DS I 20 A D R ( at V = 10V) 14.0 mohm DS(ON) GS R ( at V = 4.5V) 18.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High dens
Datasheet: YJL3401A , YJL3404A , YJL3407A , YJL3415A , YJL3416A , YJP150N06AQ , YJP200G06A , YJP70G10A , IRLB3034 , YJQ30N03A , YJQ3400A , YJQ3415A , YJQ35N04A , YJQ40G10A , YJQ40P03A , YJQ4666B , YJQ55P02A .
History: 2SK312
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK312
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