All MOSFET. YJQ3415A Datasheet

 

YJQ3415A Datasheet and Replacement


   Type Designator: YJQ3415A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36.2 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: DFN2020-6L
 

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YJQ3415A Datasheet (PDF)

 ..1. Size:1058K  cn yangzhou yangjie elec
 yjq3415a.pdf pdf_icon

YJQ3415A

RoHS COMPLIANT YJQ3415A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -6.2A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 100 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Des

 9.1. Size:1312K  cn yangzhou yangjie elec
 yjq3400a.pdf pdf_icon

YJQ3415A

RoHS COMPLIANT YJQ3400A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 7.7A D R ( at V =10V) 23mohm DS(ON) GS R ( at V =4.5V) 29mohm DS(ON) GS R ( at V =2.5V) 43mohm DS(ON) GS 100% V Tested DSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON

Datasheet: YJL3415A , YJL3416A , YJP150N06AQ , YJP200G06A , YJP70G10A , YJQ20N04A , YJQ30N03A , YJQ3400A , EMB04N03H , YJQ35N04A , YJQ40G10A , YJQ40P03A , YJQ4666B , YJQ55P02A , YJQ62G06A , YJQD30P02A , YJS03N10A .

Keywords - YJQ3415A MOSFET datasheet

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