All MOSFET. YJQ35N04A Datasheet

 

YJQ35N04A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJQ35N04A
   Marking Code: Q35N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46.7 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN3.3X3.3

 YJQ35N04A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJQ35N04A Datasheet (PDF)

 ..1. Size:654K  cn yangzhou yangjie elec
 yjq35n04a.pdf

YJQ35N04A YJQ35N04A

RoHS COMPLIANT YJQ35N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40 V DS I 35 A D R ( at V = 10V) 8.0mohm DS(ON) GS R ( at V = 4.5V) 13mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density c

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NTGS4111P

 

 
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