All MOSFET. YJQ35N04A Datasheet

 

YJQ35N04A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJQ35N04A
   Marking Code: Q35N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46.7 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN3.3X3.3

 YJQ35N04A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJQ35N04A Datasheet (PDF)

 ..1. Size:654K  cn yangzhou yangjie elec
 yjq35n04a.pdf

YJQ35N04A YJQ35N04A

RoHS COMPLIANT YJQ35N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40 V DS I 35 A D R ( at V = 10V) 8.0mohm DS(ON) GS R ( at V = 4.5V) 13mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density c

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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