All MOSFET. YJQ35N04A Datasheet

 

YJQ35N04A Datasheet and Replacement


   Type Designator: YJQ35N04A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN3.3X3.3
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YJQ35N04A Datasheet (PDF)

 ..1. Size:654K  cn yangzhou yangjie elec
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YJQ35N04A

RoHS COMPLIANT YJQ35N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40 V DS I 35 A D R ( at V = 10V) 8.0mohm DS(ON) GS R ( at V = 4.5V) 13mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density c

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: DMN6070SFCL | HLML6401 | UPA2721GR | FDD6512A | SI3460BDV | STP11NK40Z | AP85T03GH-HF

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