All MOSFET. YJQ35N04A Datasheet

 

YJQ35N04A Datasheet and Replacement


   Type Designator: YJQ35N04A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN3.3X3.3
 

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YJQ35N04A Datasheet (PDF)

 ..1. Size:654K  cn yangzhou yangjie elec
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YJQ35N04A

RoHS COMPLIANT YJQ35N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40 V DS I 35 A D R ( at V = 10V) 8.0mohm DS(ON) GS R ( at V = 4.5V) 13mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density c

Datasheet: YJL3416A , YJP150N06AQ , YJP200G06A , YJP70G10A , YJQ20N04A , YJQ30N03A , YJQ3400A , YJQ3415A , IRF9640 , YJQ40G10A , YJQ40P03A , YJQ4666B , YJQ55P02A , YJQ62G06A , YJQD30P02A , YJS03N10A , YJS10N04A .

History: HMS80N10 | UPA2731UT1A | VP2206N3 | UPA2728GR | DH012N03 | NVC3S5A51PLZ | IRF6645PBF

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