All MOSFET. YJQ40G10A Datasheet

 

YJQ40G10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJQ40G10A
   Marking Code: Q40G10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 399 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm
   Package: DFN3.3X3.3

 YJQ40G10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJQ40G10A Datasheet (PDF)

 ..1. Size:1419K  cn yangzhou yangjie elec
 yjq40g10a.pdf

YJQ40G10A YJQ40G10A

RoHS COMPLIANT YJQ40G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 40A D R ( at V =10V) 18.5 mohm DS(ON) GS R ( at V =4.5V) 22.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Excellent package for heat dissipation High densit

 9.1. Size:684K  cn yangzhou yangjie elec
 yjq40p03a.pdf

YJQ40G10A YJQ40G10A

RoHS COMPLIANT YJQ40P03A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -40A D R ( at V =-20V) 13mohm DS(ON) GS R ( at V =-10V) 15mohm DS(ON) GS R ( at V =-4.5V) 25mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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