YJQ40G10A Specs and Replacement

Type Designator: YJQ40G10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 399 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm

Package: DFN3.3X3.3

YJQ40G10A substitution

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YJQ40G10A datasheet

 ..1. Size:1419K  cn yangzhou yangjie elec
 yjq40g10a.pdf pdf_icon

YJQ40G10A

RoHS COMPLIANT YJQ40G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 40A D R ( at V =10V) 18.5 mohm DS(ON) GS R ( at V =4.5V) 22.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Excellent package for heat dissipation High densit... See More ⇒

 9.1. Size:684K  cn yangzhou yangjie elec
 yjq40p03a.pdf pdf_icon

YJQ40G10A

RoHS COMPLIANT YJQ40P03A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -40A D R ( at V =-20V) 13mohm DS(ON) GS R ( at V =-10V) 15mohm DS(ON) GS R ( at V =-4.5V) 25mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switc... See More ⇒

Detailed specifications: YJP150N06AQ, YJP200G06A, YJP70G10A, YJQ20N04A, YJQ30N03A, YJQ3400A, YJQ3415A, YJQ35N04A, EMB04N03H, YJQ40P03A, YJQ4666B, YJQ55P02A, YJQ62G06A, YJQD30P02A, YJS03N10A, YJS10N04A, YJS12G06D

Keywords - YJQ40G10A MOSFET specs

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