All MOSFET. YJQ40G10A Datasheet

 

YJQ40G10A Datasheet and Replacement


   Type Designator: YJQ40G10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 399 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm
   Package: DFN3.3X3.3
 

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YJQ40G10A Datasheet (PDF)

 ..1. Size:1419K  cn yangzhou yangjie elec
 yjq40g10a.pdf pdf_icon

YJQ40G10A

RoHS COMPLIANT YJQ40G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 40A D R ( at V =10V) 18.5 mohm DS(ON) GS R ( at V =4.5V) 22.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Excellent package for heat dissipation High densit

 9.1. Size:684K  cn yangzhou yangjie elec
 yjq40p03a.pdf pdf_icon

YJQ40G10A

RoHS COMPLIANT YJQ40P03A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -40A D R ( at V =-20V) 13mohm DS(ON) GS R ( at V =-10V) 15mohm DS(ON) GS R ( at V =-4.5V) 25mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switc

Datasheet: YJP150N06AQ , YJP200G06A , YJP70G10A , YJQ20N04A , YJQ30N03A , YJQ3400A , YJQ3415A , YJQ35N04A , EMB04N03H , YJQ40P03A , YJQ4666B , YJQ55P02A , YJQ62G06A , YJQD30P02A , YJS03N10A , YJS10N04A , YJS12G06D .

History: JMSH0406PU | SVF10N60S | 2SK345 | SK860317 | 2SJ603-S

Keywords - YJQ40G10A MOSFET datasheet

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