All MOSFET. YJQ4666B Datasheet

 

YJQ4666B Datasheet and Replacement


   Type Designator: YJQ4666B
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 127 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0365 Ohm
   Package: DFN2X2-6L
 

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YJQ4666B Datasheet (PDF)

 ..1. Size:437K  cn yangzhou yangjie elec
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YJQ4666B

RoHS COMPLIANT YJQ4666B P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -7A D R ( at V =-4.5V) 36.5mohm DS(ON) GS R ( at V =-2.5V) 46.5mohm DS(ON) GS R ( at V =-1.8V) 60.5mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed

Datasheet: YJP70G10A , YJQ20N04A , YJQ30N03A , YJQ3400A , YJQ3415A , YJQ35N04A , YJQ40G10A , YJQ40P03A , 2N7002 , YJQ55P02A , YJQ62G06A , YJQD30P02A , YJS03N10A , YJS10N04A , YJS12G06D , YJS2022A , YJS2301A .

History: 2SJ525 | SIR844DP | JCS13AN50FC | SHD225509

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