YJQ4666B Specs and Replacement

Type Designator: YJQ4666B

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 127 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0365 Ohm

Package: DFN2X2-6L

YJQ4666B substitution

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YJQ4666B datasheet

 ..1. Size:437K  cn yangzhou yangjie elec
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YJQ4666B

RoHS COMPLIANT YJQ4666B P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -7A D R ( at V =-4.5V) 36.5mohm DS(ON) GS R ( at V =-2.5V) 46.5mohm DS(ON) GS R ( at V =-1.8V) 60.5mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed... See More ⇒

Detailed specifications: YJP70G10A, YJQ20N04A, YJQ30N03A, YJQ3400A, YJQ3415A, YJQ35N04A, YJQ40G10A, YJQ40P03A, MMIS60R580P, YJQ55P02A, YJQ62G06A, YJQD30P02A, YJS03N10A, YJS10N04A, YJS12G06D, YJS2022A, YJS2301A

Keywords - YJQ4666B MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs