All MOSFET. YJQ4666B Datasheet

 

YJQ4666B Datasheet and Replacement


   Type Designator: YJQ4666B
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 127 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0365 Ohm
   Package: DFN2X2-6L
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YJQ4666B Datasheet (PDF)

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YJQ4666B

RoHS COMPLIANT YJQ4666B P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -7A D R ( at V =-4.5V) 36.5mohm DS(ON) GS R ( at V =-2.5V) 46.5mohm DS(ON) GS R ( at V =-1.8V) 60.5mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP6679GI-HF | H7N1002LM | FCPF7N60YDTU | SM6A12NSFP | SPD04N60S5

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