All MOSFET. YJQ55P02A Datasheet

 

YJQ55P02A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJQ55P02A
   Marking Code: Q55P02A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.7 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: DFN3.3X3.3

 YJQ55P02A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJQ55P02A Datasheet (PDF)

 ..1. Size:1186K  cn yangzhou yangjie elec
 yjq55p02a.pdf

YJQ55P02A YJQ55P02A

RoHS COMPLIANT YJQ55P02A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -55A D R ( at V = -4.5V) 8.3mohm DS(ON) GS R ( at V = -2.5V) 10mohm DS(ON) GS R ( at V = -1.8V) 15mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent p

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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