YJQ55P02A Specs and Replacement

Type Designator: YJQ55P02A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm

Package: DFN3.3X3.3

YJQ55P02A substitution

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YJQ55P02A datasheet

 ..1. Size:1186K  cn yangzhou yangjie elec
 yjq55p02a.pdf pdf_icon

YJQ55P02A

RoHS COMPLIANT YJQ55P02A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -55A D R ( at V = -4.5V) 8.3mohm DS(ON) GS R ( at V = -2.5V) 10mohm DS(ON) GS R ( at V = -1.8V) 15mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent p... See More ⇒

Detailed specifications: YJQ20N04A, YJQ30N03A, YJQ3400A, YJQ3415A, YJQ35N04A, YJQ40G10A, YJQ40P03A, YJQ4666B, AOD4184A, YJQ62G06A, YJQD30P02A, YJS03N10A, YJS10N04A, YJS12G06D, YJS2022A, YJS2301A, YJS2308A

Keywords - YJQ55P02A MOSFET specs

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