All MOSFET. YJQ62G06A Datasheet

 

YJQ62G06A Datasheet and Replacement


   Type Designator: YJQ62G06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 62 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: DFN3333
 

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YJQ62G06A Datasheet (PDF)

 ..1. Size:1007K  cn yangzhou yangjie elec
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YJQ62G06A

RoHS COMPLIANT YJQ62G06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I (Silicon limited) 62A D R ( at V =10V) 7.5 mohm DS(ON) GS R ( at V =4.5V) 10 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation

Datasheet: YJQ30N03A , YJQ3400A , YJQ3415A , YJQ35N04A , YJQ40G10A , YJQ40P03A , YJQ4666B , YJQ55P02A , AO3407 , YJQD30P02A , YJS03N10A , YJS10N04A , YJS12G06D , YJS2022A , YJS2301A , YJS2308A , YJS3404A .

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