YJQ62G06A Specs and Replacement

Type Designator: YJQ62G06A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 62 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: DFN3333

YJQ62G06A substitution

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YJQ62G06A datasheet

 ..1. Size:1007K  cn yangzhou yangjie elec
 yjq62g06a.pdf pdf_icon

YJQ62G06A

RoHS COMPLIANT YJQ62G06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I (Silicon limited) 62A D R ( at V =10V) 7.5 mohm DS(ON) GS R ( at V =4.5V) 10 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation ... See More ⇒

Detailed specifications: YJQ30N03A, YJQ3400A, YJQ3415A, YJQ35N04A, YJQ40G10A, YJQ40P03A, YJQ4666B, YJQ55P02A, AO4407A, YJQD30P02A, YJS03N10A, YJS10N04A, YJS12G06D, YJS2022A, YJS2301A, YJS2308A, YJS3404A

Keywords - YJQ62G06A MOSFET specs

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