All MOSFET. YJQ62G06A Datasheet

 

YJQ62G06A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJQ62G06A
   Marking Code: Q62G06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 62 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: DFN3333

 YJQ62G06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJQ62G06A Datasheet (PDF)

 ..1. Size:1007K  cn yangzhou yangjie elec
 yjq62g06a.pdf

YJQ62G06A YJQ62G06A

RoHS COMPLIANT YJQ62G06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I (Silicon limited) 62A D R ( at V =10V) 7.5 mohm DS(ON) GS R ( at V =4.5V) 10 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top