YJQD30P02A Specs and Replacement

Type Designator: YJQD30P02A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: DFN3.3X3.3

YJQD30P02A substitution

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YJQD30P02A datasheet

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YJQD30P02A

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Detailed specifications: YJQ3400A, YJQ3415A, YJQ35N04A, YJQ40G10A, YJQ40P03A, YJQ4666B, YJQ55P02A, YJQ62G06A, 60N06, YJS03N10A, YJS10N04A, YJS12G06D, YJS2022A, YJS2301A, YJS2308A, YJS3404A, YJS4409A

Keywords - YJQD30P02A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.