All MOSFET. YJQD30P02A Datasheet

 

YJQD30P02A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJQD30P02A
   Marking Code: Q30P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 72.8 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: DFN3.3X3.3

 YJQD30P02A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJQD30P02A Datasheet (PDF)

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 yjqd30p02a.pdf

YJQD30P02A YJQD30P02A

RoHS COMPLIANT YJQD30P02A P-Channel Enhancement Mode Field Effect Transistor Product Summary DFN3.3X3.3 V -20V DS I -30A D R ( at V = -4.5V) 19mohm DS(ON) GS R ( at V = -2.5V) 22mohm DS(ON) GS R ( at V = -1.8V) 30mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FS30ASJ-2 | 7NM65G-T2Q-T

 

 
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