YJQD30P02A MOSFET. Datasheet pdf. Equivalent
Type Designator: YJQD30P02A
Marking Code: Q30P02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 72.8 nC
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 330 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: DFN3.3X3.3
YJQD30P02A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJQD30P02A Datasheet (PDF)
yjqd30p02a.pdf
RoHS COMPLIANT YJQD30P02A P-Channel Enhancement Mode Field Effect Transistor Product Summary DFN3.3X3.3 V -20V DS I -30A D R ( at V = -4.5V) 19mohm DS(ON) GS R ( at V = -2.5V) 22mohm DS(ON) GS R ( at V = -1.8V) 30mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low RDS(ON)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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