All MOSFET. YJQD30P02A Datasheet

 

YJQD30P02A Datasheet and Replacement


   Type Designator: YJQD30P02A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: DFN3.3X3.3
 

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YJQD30P02A Datasheet (PDF)

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YJQD30P02A

RoHS COMPLIANT YJQD30P02A P-Channel Enhancement Mode Field Effect Transistor Product Summary DFN3.3X3.3 V -20V DS I -30A D R ( at V = -4.5V) 19mohm DS(ON) GS R ( at V = -2.5V) 22mohm DS(ON) GS R ( at V = -1.8V) 30mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low RDS(ON)

Datasheet: YJQ3400A , YJQ3415A , YJQ35N04A , YJQ40G10A , YJQ40P03A , YJQ4666B , YJQ55P02A , YJQ62G06A , AO4468 , YJS03N10A , YJS10N04A , YJS12G06D , YJS2022A , YJS2301A , YJS2308A , YJS3404A , YJS4409A .

History: STB11NK50Z | PSMN2R0-30YLE | MTP2955 | FDS6898AZ-F085 | JCS10N65FC | HM100N02K | APT5010JVRU2

Keywords - YJQD30P02A MOSFET datasheet

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