YJS03N10A Specs and Replacement

Type Designator: YJS03N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: SOT23-6L

YJS03N10A substitution

- MOSFET ⓘ Cross-Reference Search

 

YJS03N10A datasheet

 ..1. Size:576K  cn yangzhou yangjie elec
 yjs03n10a.pdf pdf_icon

YJS03N10A

RoHS COMPLIANT YJS03N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 3A D R ( at V =10V) 120 mohm DS(ON) GS R ( at V =4.5V) 140 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power HV MOSFET technology Excellent package for heat dissipation High density cel... See More ⇒

Detailed specifications: YJQ3415A, YJQ35N04A, YJQ40G10A, YJQ40P03A, YJQ4666B, YJQ55P02A, YJQ62G06A, YJQD30P02A, IRFP064N, YJS10N04A, YJS12G06D, YJS2022A, YJS2301A, YJS2308A, YJS3404A, YJS4409A, YJS4606A

Keywords - YJS03N10A MOSFET specs

 YJS03N10A cross reference

 YJS03N10A equivalent finder

 YJS03N10A pdf lookup

 YJS03N10A substitution

 YJS03N10A replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs