All MOSFET. YJS03N10A Datasheet

 

YJS03N10A Datasheet and Replacement


   Type Designator: YJS03N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT23-6L
 

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YJS03N10A Datasheet (PDF)

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YJS03N10A

RoHS COMPLIANT YJS03N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 3A D R ( at V =10V) 120 mohm DS(ON) GS R ( at V =4.5V) 140 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power HV MOSFET technology Excellent package for heat dissipation High density cel

Datasheet: YJQ3415A , YJQ35N04A , YJQ40G10A , YJQ40P03A , YJQ4666B , YJQ55P02A , YJQ62G06A , YJQD30P02A , 5N50 , YJS10N04A , YJS12G06D , YJS2022A , YJS2301A , YJS2308A , YJS3404A , YJS4409A , YJS4606A .

History: RU3091M | SQM50N04-5M0 | NCEP12T11 | APM2303A | TPW65R070D | NTR3C21NZ | PDP3960

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