All MOSFET. YJS10N04A Datasheet

 

YJS10N04A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJS10N04A
   Marking Code: Q10N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23.6 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP8

 YJS10N04A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJS10N04A Datasheet (PDF)

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 yjs10n04a.pdf

YJS10N04A YJS10N04A

RoHS COMPLIANT YJS10N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40 V DS I 10 A D R ( at V = 10V) 15mohm DS(ON) GS R ( at V = 4.5V) 24mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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