All MOSFET. YJS10N04A Datasheet

 

YJS10N04A Datasheet and Replacement


   Type Designator: YJS10N04A
   Marking Code: Q10N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 23.6 nC
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP8
 

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YJS10N04A Datasheet (PDF)

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YJS10N04A

RoHS COMPLIANT YJS10N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40 V DS I 10 A D R ( at V = 10V) 15mohm DS(ON) GS R ( at V = 4.5V) 24mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications

Datasheet: YJQ35N04A , YJQ40G10A , YJQ40P03A , YJQ4666B , YJQ55P02A , YJQ62G06A , YJQD30P02A , YJS03N10A , IRFP064N , YJS12G06D , YJS2022A , YJS2301A , YJS2308A , YJS3404A , YJS4409A , YJS4606A , YJS8205A .

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