YJS12G06D Specs and Replacement

Type Designator: YJS12G06D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: SOP8

YJS12G06D substitution

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YJS12G06D datasheet

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YJS12G06D

RoHS COMPLIANT YJS12G06D N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS 60V ID 12A RDS(ON)( at VGS=10V) 8.5 mohm RDS(ON)( at VGS=4.5V) 12 mohm 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for ... See More ⇒

Detailed specifications: YJQ40G10A, YJQ40P03A, YJQ4666B, YJQ55P02A, YJQ62G06A, YJQD30P02A, YJS03N10A, YJS10N04A, IRF730, YJS2022A, YJS2301A, YJS2308A, YJS3404A, YJS4409A, YJS4606A, YJS8205A, CSD15380F3

Keywords - YJS12G06D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.