YJS12G06D MOSFET. Datasheet pdf. Equivalent
Type Designator: YJS12G06D
Marking Code: Q12G06D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 390 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: SOP8
YJS12G06D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJS12G06D Datasheet (PDF)
..1. Size:1223K cn yangzhou yangjie elec
yjs12g06d.pdf
yjs12g06d.pdf
RoHS COMPLIANT YJS12G06D N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS 60V ID 12A RDS(ON)( at VGS=10V) 8.5 mohm RDS(ON)( at VGS=4.5V) 12 mohm 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
