All MOSFET. YJS2022A Datasheet

 

YJS2022A Datasheet and Replacement


   Type Designator: YJS2022A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP8
 

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YJS2022A Datasheet (PDF)

 ..1. Size:1229K  cn yangzhou yangjie elec
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YJS2022A

RoHS COMPLIANT YJS2022A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -13A D R ( at V = -4.5V) 17mohm DS(ON) GS R ( at V = -2.5V) 20mohm DS(ON) GS R ( at V = -1.8V) 26mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low RDS(ON) High Speed

Datasheet: YJQ40P03A , YJQ4666B , YJQ55P02A , YJQ62G06A , YJQD30P02A , YJS03N10A , YJS10N04A , YJS12G06D , IRFZ44N , YJS2301A , YJS2308A , YJS3404A , YJS4409A , YJS4606A , YJS8205A , CSD15380F3 , CSD17581Q5A .

History: 2N7002KB | SVT4607SA | SSM3K72KFS | HFU70N03V | IPI80P04P4-07 | CPC3720 | TK12J60W

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