YJS2022A Specs and Replacement

Type Designator: YJS2022A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SOP8

YJS2022A substitution

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YJS2022A datasheet

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YJS2022A

RoHS COMPLIANT YJS2022A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -13A D R ( at V = -4.5V) 17mohm DS(ON) GS R ( at V = -2.5V) 20mohm DS(ON) GS R ( at V = -1.8V) 26mohm DS(ON) GS General Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON) High Speed ... See More ⇒

Detailed specifications: YJQ40P03A, YJQ4666B, YJQ55P02A, YJQ62G06A, YJQD30P02A, YJS03N10A, YJS10N04A, YJS12G06D, IRFZ44N, YJS2301A, YJS2308A, YJS3404A, YJS4409A, YJS4606A, YJS8205A, CSD15380F3, CSD17581Q5A

Keywords - YJS2022A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.