All MOSFET. YJS2022A Datasheet

 

YJS2022A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJS2022A
   Marking Code: Q2022
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 72.8 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP8

 YJS2022A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJS2022A Datasheet (PDF)

 ..1. Size:1229K  cn yangzhou yangjie elec
 yjs2022a.pdf

YJS2022A YJS2022A

RoHS COMPLIANT YJS2022A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -13A D R ( at V = -4.5V) 17mohm DS(ON) GS R ( at V = -2.5V) 20mohm DS(ON) GS R ( at V = -1.8V) 26mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low RDS(ON) High Speed

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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