All MOSFET. YJS2022A Datasheet

 

YJS2022A Datasheet and Replacement


   Type Designator: YJS2022A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP8
 

 YJS2022A substitution

   - MOSFET ⓘ Cross-Reference Search

 

YJS2022A Datasheet (PDF)

 ..1. Size:1229K  cn yangzhou yangjie elec
 yjs2022a.pdf pdf_icon

YJS2022A

RoHS COMPLIANT YJS2022A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -13A D R ( at V = -4.5V) 17mohm DS(ON) GS R ( at V = -2.5V) 20mohm DS(ON) GS R ( at V = -1.8V) 26mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low RDS(ON) High Speed

Datasheet: YJQ40P03A , YJQ4666B , YJQ55P02A , YJQ62G06A , YJQD30P02A , YJS03N10A , YJS10N04A , YJS12G06D , IRFZ44N , YJS2301A , YJS2308A , YJS3404A , YJS4409A , YJS4606A , YJS8205A , CSD15380F3 , CSD17581Q5A .

History: NVTFS6H880N | SWB088R08E8T

Keywords - YJS2022A MOSFET datasheet

 YJS2022A cross reference
 YJS2022A equivalent finder
 YJS2022A lookup
 YJS2022A substitution
 YJS2022A replacement

 

 
Back to Top

 


 
.