All MOSFET. YJS2301A Datasheet

 

YJS2301A Datasheet and Replacement


   Type Designator: YJS2301A
   Marking Code: .S1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.3 nC
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 89 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: SOT23-6L
 

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YJS2301A Datasheet (PDF)

 ..1. Size:600K  cn yangzhou yangjie elec
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YJS2301A

RoHS COMPLIANT YJS2301A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -3.7A D R ( at V =-4.5V) 64 mohm DS(ON) GS R ( at V =-2.5V) 80 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi

 8.1. Size:1651K  cn yangzhou yangjie elec
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YJS2301A

RoHS COMPLIANT YJS2308A N-Channel and P-Channel Complementary Power MOSFET Product Summary NMOS V 20V DS I 5.6A D R ( at VGS=4.5V) 25mohm DS(ON) R ( at VGS=2.5V) 32mohm DS(ON) R ( at VGS=1.8V) 49mohm DS(ON)PMOS V -20V DS I -3.7A D R ( at VGS=-4.5V) 64mohm DS(ON) R ( at VGS=-2.5V) 80mohm DS(ON) R (

Datasheet: YJQ4666B , YJQ55P02A , YJQ62G06A , YJQD30P02A , YJS03N10A , YJS10N04A , YJS12G06D , YJS2022A , IRF3205 , YJS2308A , YJS3404A , YJS4409A , YJS4606A , YJS8205A , CSD15380F3 , CSD17581Q5A , CSD17585F5 .

History: MTM10N100E

Keywords - YJS2301A MOSFET datasheet

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