All MOSFET. YJS2301A Datasheet

 

YJS2301A Datasheet and Replacement


   Type Designator: YJS2301A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 89 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: SOT23-6L
      - MOSFET Cross-Reference Search

 

YJS2301A Datasheet (PDF)

 ..1. Size:600K  cn yangzhou yangjie elec
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YJS2301A

RoHS COMPLIANT YJS2301A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -3.7A D R ( at V =-4.5V) 64 mohm DS(ON) GS R ( at V =-2.5V) 80 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi

 8.1. Size:1651K  cn yangzhou yangjie elec
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YJS2301A

RoHS COMPLIANT YJS2308A N-Channel and P-Channel Complementary Power MOSFET Product Summary NMOS V 20V DS I 5.6A D R ( at VGS=4.5V) 25mohm DS(ON) R ( at VGS=2.5V) 32mohm DS(ON) R ( at VGS=1.8V) 49mohm DS(ON)PMOS V -20V DS I -3.7A D R ( at VGS=-4.5V) 64mohm DS(ON) R ( at VGS=-2.5V) 80mohm DS(ON) R (

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STP110N8F7 | IXTP20N65X | 4420 | IRLR3714ZPBF | BUZ71FI | FDS4480 | FRE160R

Keywords - YJS2301A MOSFET datasheet

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