YJS2301A Specs and Replacement

Type Designator: YJS2301A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 89 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm

Package: SOT23-6L

YJS2301A substitution

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YJS2301A datasheet

 ..1. Size:600K  cn yangzhou yangjie elec
 yjs2301a.pdf pdf_icon

YJS2301A

RoHS COMPLIANT YJS2301A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -3.7A D R ( at V =-4.5V) 64 mohm DS(ON) GS R ( at V =-2.5V) 80 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GS General Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi... See More ⇒

 8.1. Size:1651K  cn yangzhou yangjie elec
 yjs2308a.pdf pdf_icon

YJS2301A

RoHS COMPLIANT YJS2308A N-Channel and P-Channel Complementary Power MOSFET Product Summary NMOS V 20V DS I 5.6A D R ( at VGS=4.5V) 25mohm DS(ON) R ( at VGS=2.5V) 32mohm DS(ON) R ( at VGS=1.8V) 49mohm DS(ON) PMOS V -20V DS I -3.7A D R ( at VGS=-4.5V) 64mohm DS(ON) R ( at VGS=-2.5V) 80mohm DS(ON) R ( ... See More ⇒

Detailed specifications: YJQ4666B, YJQ55P02A, YJQ62G06A, YJQD30P02A, YJS03N10A, YJS10N04A, YJS12G06D, YJS2022A, IRF3205, YJS2308A, YJS3404A, YJS4409A, YJS4606A, YJS8205A, CSD15380F3, CSD17581Q5A, CSD17585F5

Keywords - YJS2301A MOSFET specs

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