All MOSFET. YJS4409A Datasheet

 

YJS4409A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJS4409A
   Marking Code: Q4409
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 77.2 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 674 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SOP8

 YJS4409A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJS4409A Datasheet (PDF)

 ..1. Size:1159K  cn yangzhou yangjie elec
 yjs4409a.pdf

YJS4409A YJS4409A

RoHS COMPLIANT YJS4409A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -18A D R ( at V =-20V) 5.5mohm DS(ON) GS R ( at V =-10V) 6.0mohm DS(ON) GS R ( at V =-4.5V) 10mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed swit

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