All MOSFET. YJS4409A Datasheet

 

YJS4409A Datasheet and Replacement


   Type Designator: YJS4409A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 674 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SOP8
 

 YJS4409A substitution

   - MOSFET ⓘ Cross-Reference Search

 

YJS4409A Datasheet (PDF)

 ..1. Size:1159K  cn yangzhou yangjie elec
 yjs4409a.pdf pdf_icon

YJS4409A

RoHS COMPLIANT YJS4409A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -18A D R ( at V =-20V) 5.5mohm DS(ON) GS R ( at V =-10V) 6.0mohm DS(ON) GS R ( at V =-4.5V) 10mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed swit

Datasheet: YJQD30P02A , YJS03N10A , YJS10N04A , YJS12G06D , YJS2022A , YJS2301A , YJS2308A , YJS3404A , 20N60 , YJS4606A , YJS8205A , CSD15380F3 , CSD17581Q5A , CSD17585F5 , CSD18543Q3A , CSD19538Q3A , CSD23280F3 .

History: SD212 | SI6443DQ | FQA46N15F109 | HY3410PM | STP310N10F7 | IRFS3207ZPBF | SIF12N65C

Keywords - YJS4409A MOSFET datasheet

 YJS4409A cross reference
 YJS4409A equivalent finder
 YJS4409A lookup
 YJS4409A substitution
 YJS4409A replacement

 

 
Back to Top

 


 
.