YJS4409A Specs and Replacement

Type Designator: YJS4409A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 674 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: SOP8

YJS4409A substitution

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YJS4409A datasheet

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YJS4409A

RoHS COMPLIANT YJS4409A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -18A D R ( at V =-20V) 5.5mohm DS(ON) GS R ( at V =-10V) 6.0mohm DS(ON) GS R ( at V =-4.5V) 10mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed swit... See More ⇒

Detailed specifications: YJQD30P02A, YJS03N10A, YJS10N04A, YJS12G06D, YJS2022A, YJS2301A, YJS2308A, YJS3404A, 20N60, YJS4606A, YJS8205A, CSD15380F3, CSD17581Q5A, CSD17585F5, CSD18543Q3A, CSD19538Q3A, CSD23280F3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.