All MOSFET. YJS4606A Datasheet

 

YJS4606A Datasheet and Replacement


   Type Designator: YJS4606A
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28.2 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SOP8
 

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YJS4606A Datasheet (PDF)

 ..1. Size:1633K  cn yangzhou yangjie elec
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YJS4606A

RoHS COMPLIANT YJS4606A N-Channel and P-Channel Complementary Power MOSFET Product Summary NMOS V 30V DS I 6A D R ( at VGS=10V) 29mohm DS(ON) R ( at VGS=4.5V) 40mohm DS(ON)PMOS V -30V DS I -5A D R ( at VGS=-10V) 55mohm DS(ON) R ( at VGS=-4.5V) 68mohm DS(ON) 100% V Tested DSGeneral Description Tr

Datasheet: YJS03N10A , YJS10N04A , YJS12G06D , YJS2022A , YJS2301A , YJS2308A , YJS3404A , YJS4409A , IRF540 , YJS8205A , CSD15380F3 , CSD17581Q5A , CSD17585F5 , CSD18543Q3A , CSD19538Q3A , CSD23280F3 , CSD86360Q5D .

History: SIB911DK | SIB800EDK

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