All MOSFET. YJS8205A Datasheet

 

YJS8205A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJS8205A
   Marking Code: S0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.05 nC
   trⓘ - Rise Time: 19.8 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT23-6L

 YJS8205A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJS8205A Datasheet (PDF)

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 yjs8205a.pdf

YJS8205A YJS8205A

RoHS COMPLIANT YJS8205A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 5.5A D R ( at V =4.5V) 25mohm DS(ON) GS R ( at V =2.5V) 32mohm DS(ON) GS R ( at V =1.8V) 49mohm DS(ON) GS 100% V Tested DSGeneral Description Trench Power MV MOSFET technology High Power and current handing capability

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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