All MOSFET. YJS8205A Datasheet

 

YJS8205A Datasheet and Replacement


   Type Designator: YJS8205A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.8 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT23-6L
 

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YJS8205A Datasheet (PDF)

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YJS8205A

RoHS COMPLIANT YJS8205A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 5.5A D R ( at V =4.5V) 25mohm DS(ON) GS R ( at V =2.5V) 32mohm DS(ON) GS R ( at V =1.8V) 49mohm DS(ON) GS 100% V Tested DSGeneral Description Trench Power MV MOSFET technology High Power and current handing capability

Datasheet: YJS10N04A , YJS12G06D , YJS2022A , YJS2301A , YJS2308A , YJS3404A , YJS4409A , YJS4606A , IRF540N , CSD15380F3 , CSD17581Q5A , CSD17585F5 , CSD18543Q3A , CSD19538Q3A , CSD23280F3 , CSD86360Q5D , CSD87333Q3D .

History: BRI5N65 | FDD107AN06LA0 | STP95N2LH5 | SL18N50F | TK20A60T | KF3N60P | STB12NM60N

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