YJS8205A Specs and Replacement

Type Designator: YJS8205A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.8 nS

Cossⓘ - Output Capacitance: 82 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOT23-6L

YJS8205A substitution

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YJS8205A datasheet

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YJS8205A

RoHS COMPLIANT YJS8205A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 5.5A D R ( at V =4.5V) 25mohm DS(ON) GS R ( at V =2.5V) 32mohm DS(ON) GS R ( at V =1.8V) 49mohm DS(ON) GS 100% V Tested DS General Description Trench Power MV MOSFET technology High Power and current handing capability... See More ⇒

Detailed specifications: YJS10N04A, YJS12G06D, YJS2022A, YJS2301A, YJS2308A, YJS3404A, YJS4409A, YJS4606A, IRF540, CSD15380F3, CSD17581Q5A, CSD17585F5, CSD18543Q3A, CSD19538Q3A, CSD23280F3, CSD86360Q5D, CSD87333Q3D

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