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FDB2710 Specs and Replacement


   Type Designator: FDB2710
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0425 Ohm
   Package: TO263 D2PAK
 

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FDB2710 Specs

 ..1. Size:609K  fairchild semi
 fdb2710.pdf pdf_icon

FDB2710

November 2006 FDB2710 tm 250V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semicon- 50A, 250V, RDS(on) = 36.3m @VGS = 10 V ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superior switching ... See More ⇒

 ..2. Size:356K  inchange semiconductor
 fdb2710.pdf pdf_icon

FDB2710

isc N-Channel MOSFET Transistor FDB2710 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 42.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A... See More ⇒

Detailed specifications: STU408D , FDB15N50 , FDB2532 , FDB2532F085 , FDB2552 , FDB2572 , FDB2614 , STU409DH , SKD502T , FDB28N30TM , FDB33N25 , FDB3502 , FDB3632 , STU40N01 , FDB3652F085 , STU410S , FDB3672F085 .

Keywords - FDB2710 MOSFET specs

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