All MOSFET. FDB2710 Datasheet

 

FDB2710 Datasheet and Replacement


   Type Designator: FDB2710
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0425 Ohm
   Package: TO263 D2PAK
 

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FDB2710 Datasheet (PDF)

 ..1. Size:609K  fairchild semi
 fdb2710.pdf pdf_icon

FDB2710

November 2006FDB2710tm250V N-Channel PowerTrench MOSFETGeneral Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- 50A, 250V, RDS(on) = 36.3m @VGS = 10 Vductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superior switching

 ..2. Size:356K  inchange semiconductor
 fdb2710.pdf pdf_icon

FDB2710

isc N-Channel MOSFET Transistor FDB2710FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 42.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

Datasheet: STU408D , FDB15N50 , FDB2532 , FDB2532F085 , FDB2552 , FDB2572 , FDB2614 , STU409DH , SPP20N60C3 , FDB28N30TM , FDB33N25 , FDB3502 , FDB3632 , STU40N01 , FDB3652F085 , STU410S , FDB3672F085 .

History: TK8P60W

Keywords - FDB2710 MOSFET datasheet

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