FDB2710 Datasheet. Specs and Replacement

Type Designator: FDB2710  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0425 Ohm

Package: TO263 D2PAK

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FDB2710 datasheet

 ..1. Size:609K  fairchild semi
 fdb2710.pdf pdf_icon

FDB2710

November 2006 FDB2710 tm 250V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semicon- 50A, 250V, RDS(on) = 36.3m @VGS = 10 V ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superior switching ... See More ⇒

 ..2. Size:356K  inchange semiconductor
 fdb2710.pdf pdf_icon

FDB2710

isc N-Channel MOSFET Transistor FDB2710 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 42.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A... See More ⇒

Detailed specifications: STU408D, FDB15N50, FDB2532, FDB2532F085, FDB2552, FDB2572, FDB2614, STU409DH, SKD502T, FDB28N30TM, FDB33N25, FDB3502, FDB3632, STU40N01, FDB3652F085, STU410S, FDB3672F085

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