All MOSFET. FDB28N30TM Datasheet

 

FDB28N30TM MOSFET. Datasheet pdf. Equivalent

Type Designator: FDB28N30TM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Maximum Drain-Source On-State Resistance (Rds): 0.129 Ohm

Package: TO263, D2PAK

FDB28N30TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB28N30TM Datasheet (PDF)

0.1. fdb28n30tm.pdf Size:314K _fairchild_semi

FDB28N30TM
FDB28N30TM

June 2007 UniFETTM FDB28N30 tm N-Channel MOSFET 300V, 28A, 0.129Ω Features Description • RDS(on) = 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 39nC) stripe, DMOS technology. • Low Crss ( Typ. 35pF) This advanced technology has been especia

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