FDB28N30TM MOSFET Datasheet: N-Ch, 300V, 28A. Full specification with pinout and replacement list

FDB28N30TM Specs and Replacement

Type Designator: FDB28N30TM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.129 Ohm

Package: TO263 D2PAK

FDB28N30TM substitution

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FDB28N30TM datasheet

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June 2007 UniFETTM FDB28N30 tm N-Channel MOSFET 300V, 28A, 0.129 Features Description RDS(on) = 0.108 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 39nC) stripe, DMOS technology. Low Crss ( Typ. 35pF) This advanced technology has been especia... See More ⇒

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDB15N50 , FDB2532 , FDB2532F085 , FDB2552 , FDB2572 , FDB2614 , STU409DH , FDB2710 , K4145 , FDB33N25 , FDB3502 , FDB3632 , STU40N01 , FDB3652F085 , STU410S , FDB3672F085 , STU411D .