FDB28N30TM MOSFET. Datasheet pdf. Equivalent
Type Designator: FDB28N30TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 300 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 28 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 39 nC
Maximum Drain-Source On-State Resistance (Rds): 0.129 Ohm
Package: TO263, D2PAK
FDB28N30TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDB28N30TM Datasheet (PDF)
0.1. fdb28n30tm.pdf 
Size:314K _fairchild_semi
June 2007 UniFETTM FDB28N30 tm N-Channel MOSFET 300V, 28A, 0.129Ω Features Description • RDS(on) = 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 39nC) stripe, DMOS technology. • Low Crss ( Typ. 35pF) This advanced technology has been especia
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