All MOSFET. FDB28N30TM Datasheet

 

FDB28N30TM Datasheet and Replacement


   Type Designator: FDB28N30TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 39 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.129 Ohm
   Package: TO263 D2PAK
 

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FDB28N30TM Datasheet (PDF)

 ..1. Size:314K  fairchild semi
 fdb28n30tm.pdf pdf_icon

FDB28N30TM

June 2007UniFETTMFDB28N30tmN-Channel MOSFET 300V, 28A, 0.129Features Description RDS(on) = 0.108 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 39nC) stripe, DMOS technology. Low Crss ( Typ. 35pF)This advanced technology has been especia

 6.1. Size:665K  onsemi
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FDB28N30TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDB15N50 , FDB2532 , FDB2532F085 , FDB2552 , FDB2572 , FDB2614 , STU409DH , FDB2710 , RFP50N06 , FDB33N25 , FDB3502 , FDB3632 , STU40N01 , FDB3652F085 , STU410S , FDB3672F085 , STU411D .

History: 2SJ204

Keywords - FDB28N30TM MOSFET datasheet

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