FDB28N30TM MOSFET. Datasheet pdf. Equivalent

   Type Designator: FDB28N30TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.129 Ohm
   Package: TO263 D2PAK

FDB28N30TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS