FDB33N25 Datasheet. Specs and Replacement

Type Designator: FDB33N25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 235 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm

Package: TO263 D2PAK

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FDB33N25 datasheet

 ..1. Size:916K  fairchild semi
 fdb33n25 fdi33n25.pdf pdf_icon

FDB33N25

May 2006 TM UniFET FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 36.8 nC) stripe, DMOS technology. Low Crss ( typical 39 pF) This advanced technology has been especially ... See More ⇒

 ..2. Size:534K  onsemi
 fdb33n25.pdf pdf_icon

FDB33N25

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDB2532, FDB2532F085, FDB2552, FDB2572, FDB2614, STU409DH, FDB2710, FDB28N30TM, 13N50, FDB3502, FDB3632, STU40N01, FDB3652F085, STU410S, FDB3672F085, STU411D, FDB3682

Keywords - FDB33N25 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.