All MOSFET. FDB33N25 Datasheet

 

FDB33N25 Datasheet and Replacement


   Type Designator: FDB33N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 36.8 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
   Package: TO263 D2PAK
 

 FDB33N25 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDB33N25 Datasheet (PDF)

 ..1. Size:916K  fairchild semi
 fdb33n25 fdi33n25.pdf pdf_icon

FDB33N25

May 2006 TMUniFETFDB33N25 / FDI33N25250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 36.8 nC)stripe, DMOS technology. Low Crss ( typical 39 pF)This advanced technology has been especially

 ..2. Size:534K  onsemi
 fdb33n25.pdf pdf_icon

FDB33N25

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2N6762JTX

Keywords - FDB33N25 MOSFET datasheet

 FDB33N25 cross reference
 FDB33N25 equivalent finder
 FDB33N25 lookup
 FDB33N25 substitution
 FDB33N25 replacement

 

 
Back to Top

 


 
.