TMP20N65H Specs and Replacement
Type Designator: TMP20N65H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 416 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 291 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO220
TMP20N65H substitution
- MOSFET ⓘ Cross-Reference Search
TMP20N65H datasheet
tma20n65h tmp20n65h.pdf
TMA20N65H, TMP20N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA20N65H TO-220F A2... See More ⇒
tmp20n50 tmpf20n50.pdf
TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax Features ID = 18A Low gate charge RDS(on) = 0.3 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP20N50 / TMPF20N50 TO-220 / TO-220F TMP20N50 / TMPF20N50 RoHS TMP20N50... See More ⇒
tmp20n50a tmpf20n50a.pdf
TMP20N50A(G)/TMPF20N50A(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 18A ... See More ⇒
Detailed specifications: TMA10N60H, TMA10N65H, TMP10N65H, TMA10N80H, TMA12N50H, TMA12N65H, TMP12N65H, TMA20N65H, IRF4905, TMA20N65HG, TMW20N65HG, TMA2N60H, TMD2N60H, TMT2N60H, TMU2N60H, TMA4N60H, TMU4N60H
Keywords - TMP20N65H MOSFET specs
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