TMW20N65HG Datasheet and Replacement
Type Designator: TMW20N65HG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 48.4 nS
Cossⓘ - Output Capacitance: 249.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO247
TMW20N65HG Datasheet (PDF)
tma20n65hg tmw20n65hg.pdf

TMA20N65HG,TMW20N65HG Wuxi Unigroup Microelectronics Co.,Ltd 650V N-Channel MOSFET Description 650V N-Channel MOSFET VDMOSFET is a double-diffusion device which the current flows is vertically, and is a voltage-controlled device. Under the control of the appropriate gate voltage, the semiconductor surface is inverted, forming a conductive channel and an appropriate amount of curre
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IPL60R180P6 | IPB080N03L | DSK9J01 | NCE40H11 | SL12N100T | FDD8750 | SSF10N60
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History: IPL60R180P6 | IPB080N03L | DSK9J01 | NCE40H11 | SL12N100T | FDD8750 | SSF10N60



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