All MOSFET. TMW20N65HG Datasheet

 

TMW20N65HG Datasheet and Replacement


   Type Designator: TMW20N65HG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48.4 nS
   Cossⓘ - Output Capacitance: 249.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO247
 

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TMW20N65HG Datasheet (PDF)

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TMW20N65HG

TMA20N65HG,TMW20N65HG Wuxi Unigroup Microelectronics Co.,Ltd 650V N-Channel MOSFET Description 650V N-Channel MOSFET VDMOSFET is a double-diffusion device which the current flows is vertically, and is a voltage-controlled device. Under the control of the appropriate gate voltage, the semiconductor surface is inverted, forming a conductive channel and an appropriate amount of curre

Datasheet: TMP10N65H , TMA10N80H , TMA12N50H , TMA12N65H , TMP12N65H , TMA20N65H , TMP20N65H , TMA20N65HG , AO3401 , TMA2N60H , TMD2N60H , TMT2N60H , TMU2N60H , TMA4N60H , TMU4N60H , TMD4N60H , TMP4N60H .

History: JMSL0315ARD | SUM110N04-04

Keywords - TMW20N65HG MOSFET datasheet

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