All MOSFET. TMW20N65HG Datasheet

 

TMW20N65HG MOSFET. Datasheet pdf. Equivalent


   Type Designator: TMW20N65HG
   Marking Code: W20N65HG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 48.4 nS
   Cossⓘ - Output Capacitance: 249.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO247

 TMW20N65HG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMW20N65HG Datasheet (PDF)

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 tma20n65hg tmw20n65hg.pdf

TMW20N65HG TMW20N65HG

TMA20N65HG,TMW20N65HG Wuxi Unigroup Microelectronics Co.,Ltd 650V N-Channel MOSFET Description 650V N-Channel MOSFET VDMOSFET is a double-diffusion device which the current flows is vertically, and is a voltage-controlled device. Under the control of the appropriate gate voltage, the semiconductor surface is inverted, forming a conductive channel and an appropriate amount of curre

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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