TMW20N65HG Specs and Replacement

Type Designator: TMW20N65HG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48.4 nS

Cossⓘ - Output Capacitance: 249.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO247

TMW20N65HG substitution

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TMW20N65HG datasheet

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TMW20N65HG

TMA20N65HG,TMW20N65HG Wuxi Unigroup Microelectronics Co.,Ltd 650V N-Channel MOSFET Description 650V N-Channel MOSFET VDMOSFET is a double-diffusion device which the current flows is vertically, and is a voltage-controlled device. Under the control of the appropriate gate voltage, the semiconductor surface is inverted, forming a conductive channel and an appropriate amount of curre... See More ⇒

Detailed specifications: TMP10N65H, TMA10N80H, TMA12N50H, TMA12N65H, TMP12N65H, TMA20N65H, TMP20N65H, TMA20N65HG, AO3401, TMA2N60H, TMD2N60H, TMT2N60H, TMU2N60H, TMA4N60H, TMU4N60H, TMD4N60H, TMP4N60H

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.